DatasheetsPDF.com

SP206


Part Number SP206
Manufacturer Sipex
Title +5V High-Speed RS-232 Transceivers with 0.1uF Capacitors
Description The SP200 Series are multi–channel RS-232 line transceivers in a variety of configurations to fit most communication needs. All models in this Se...
Features The SP200 Series multi
  –channel RS-232 line transceivers provide a variety of configurations to fit most communication needs, especially those applications where ±12V is not available. All models in this Series feature low
  –power CMOS construction and Sipex proprietary onboard charge pump circuitry t...

File Size 213.15KB
Datasheet SP206 PDF File








Similar Ai Datasheet

SP200 : The SP200 Series are multi–channel RS-232 line transceivers in a variety of configurations to fit most communication needs. All models in this Series feature low–power CMOS construction and Sipex patented (5,306,954) on-board charge pump circuitry to generate the ±10V RS-232 voltage levels, using 0.1µF charge pump capacitors to save board space and reduce circuit cost. The SP200, SP205, SP206, SP207B, SP211 and SP213 models feature a low–power shutdown mode, which reduces power supply drain to 1µA. A WakeUp function keeps the receivers active in the shutdown mode. Number of RS-232 Model Drivers Receivers SP200 5 0 SP204 4 0 SP205 5 5 SP205B 5 5 SP206 4 3 SP206B 4 3 SP207 5 3 SP207B 5 3 SP20.

SP200F : www.DataSheet4U.com 12,500 V - 25,000 V Rectifier Stacks 0.5 A Forward Current 150 ns Recovery Time SP125F SP150F SP200F SP250F ELECTRICAL CHARACTERISTICS AND MAXIMUM RATINGS Part Number Working Reverse Voltage (Vrwm) Average Rectified Current (in oil) (Io) 55°C Volts SP125F SP150F SP200F SP250F Amps 100°C Amps Reverse Current @ Vrwm (Ir) 25°C µA 100°C µA 25°C Volts Amps Forward Voltage 1 Cycle Surge Current tp=8.3ms (Ifsm) 25°C Amps Repetitive Surge Current (Ifrm) 25°C Amps Reverse Recovery Time (1) (Trr) 25°C ns in. Case Length (L) (Vf) 12500 15000 20000 25000 0.5 0.5 0.5 0.5 0.33 0.33 0.33 0.33 1.0 1.0 1.0 1.0 25 25 25 25 24.0 24.0 32.0 40.0 1.0 1.0 1.0 1.0 40 40 40 40 8 8 8 .

SP200S : www.DataSheet4U.com 15,000 V - 30,000 V Rectifier Stacks 0.5 A Forward Current 3000 ns Recovery Time SP150S SP200S SP250S SP300S ELECTRICAL CHARACTERISTICS AND MAXIMUM RATINGS Part Number Working Reverse Voltage (Vrwm) Average Rectified Current (in oil) (Io) 55°C Volts SP150S SP200S SP250S SP300S Amps 100°C Amps Reverse Current @ Vrwm (Ir) 25°C µA 100°C µA 25°C Volts Amps Forward Voltage 1 Cycle Surge Current tp=8.3ms (Ifsm) 25°C Amps Repetitive Surge Current (Ifrm) 25°C Amps Reverse Recovery Time (1) (Trr) 25°C ns in. Case Length (L) (Vf) 15000 20000 25000 30000 0.5 0.5 0.5 0.5 0.33 0.33 0.33 0.33 1.0 1.0 1.0 1.0 25 25 25 25 25.5 34.0 42.5 51.0 2.0 2.0 2.0 2.0 40 40 40 40 8 8 8.

SP201 : Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process features low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency. TM SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 4.0 Watts Single Ended Package Style AP HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE o ABSOLUTE MAXIMUM RATINGS ( T = 25 C ) Total Device Dissipation 20 Watts Junction to Case Thermal Resistance o 10.00 C/W Maximum Junction Temperature o 200 C Storage Temperature o o -65 C to 150 C D.

SP20100R : Elektronische Bauelemente SP20100R Voltage 100V 20.0 Amp Schottky Barrier Rectifiers RoHS Compliant Product A suffix of “-C” specifies halogen free FEATURES  Low forward voltage drop  High current capability  High reliability  High surge current capability  Epitaxial construction MECHANICAL DATA  Case: Molded plastic  Epoxy: UL94V-0 rate flame retardant  Lead: Lead solderable per MIL-STD-202 method 208 guaranteed  Polarity: As Marked  Mounting position: Any  Weight: 2.24 grams (approximate) ITO-220 BN MA D E PIN 1 PIN 3 CASE PIN 2 H JC K LL G F REF. A B C D E F G Millimeter Min. Max. 14.60 15.60 9.50 10.50 12.60 13.70 4.30 4.70 2.50 3.2 2.40 2.80 0.30 0.70 RE.

SP2013 : Green Product SP2013 Ver 1.1 S a mHop Microelectronics C orp. P-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS ID R DS(ON) (m Ω) Max 20 @ VGS=-4.5V 21 @ VGS=-4.0V -20V -8.5A 22 @ VGS=-3.7V 25 @ VGS=-3.1V 28 @ VGS=-2.5V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. D D D P in 1 5 6 7 8 4 3 2 1 G S S S D TSON 3.3 x 3.3 ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed b a d Limit -20 ±12 TA=25°C TA=70°C TA=25°C TA=70°C -8.5 -6.8 -49 a Units V V A A A W W °C Maximum Power Dissi.

SP20150 : SP20150 Elektronische Bauelemente VOLTAGE 150V 20.0AMP Schottky Barrier Rectifiers RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free ITO-220 FEATURES * Low forward voltage drop * High current capability * High reliability * High surge current capability * Epitaxial construction 10 0.5 3.2 0.2 0.1 4.5 0.2 0.3 2.8 0.2 2.7 MECHANICAL DATA * Case: Molded plastic * Epoxy: UL 94V-0 rate flame retardant * Lead: Lead solderable per MIL-STD-202, method 208 guaranteed * Polarity: As Marked * Mounting position: Any * Weight: 2.24 grams(Approximately) 3.7 0.2 2.54 0.2 0.7 2.54 PIN 1 PIN 3 0.2 0.2 13Min 1.3 0.2 15 0.3 0.5 2.6 0.2 0.2 CASE PIN 2 Dimensions in mil.

SP20150R : Elektronische Bauelemente SP20150R Voltage 150 V 20.0 Amp Schottky Barrier Rectifiers FEATURES  Low forward voltage drop  High current capability  High reliability  High surge current capability  Epitaxial construction RoHS Compliant Product A suffix of “-C” specifies halogen free ITO-220 BN MA D E MECHANICAL DATA  Case: Molded plastic  Epoxy: UL94V-0 rate flame retardant  Lead: Lead solderable per MIL-STD-202 method 208 guaranteed  Polarity: As Marked  Mounting position: Any  Weight: 1.64 grams(Approximately) H JC K LL G F REF. A B C D E F G Millimeter Min. Max. 14.60 15.70 9.50 10.50 12.60 14.00 4.30 4.70 2.30 3.2 2.30 2.80 0.30 0.70   REF. H J K L M N.

SP202 : Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process features low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency. TM SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 8.0 Watts Single Ended Package Style AP HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE o ABSOLUTE MAXIMUM RATINGS ( T = 25 C ) Total Device Dissipation 30 Watts Junction to Case Thermal Resistance o 7.00 C/W Maximum Junction Temperature o 200 C Storage Temperature o o -65 C to 150 C DC.

SP2026 : The SP2026 is a dual +2.7V to +5.5V supervisory power control switch that is current limited to 1.25A and has thermal shutdown to protect itself and the load. A device is disabled in thermal shutdown until the excessive current load is removed, the appropriate enable pins are toggled, or the die temperature cools to 120°C. The undervoltage lockout feature disables the output switches until a valid input voltage, VIN = 2.4V, is present. Once a valid input voltage is present and the SP2026 is enabled, a 1ms soft start prevents momentary voltage drops caused by charging a capacitive load. The SP2026 has a low on resistance, 100mΩ, and supplies a 500mA minimum output current per switch. In overc.

SP202E : The SP202E, SP232E and SP233E devices are a family of line driver and receiver pairs that meets the specifications of RS-232 and V.28 serial protocols. The devices are pin-to-pin compatible with MaxLinear’s SP232A and SP233A devices as well as popular industry standard pinouts. The ESD tolerance has been improved on these devices to over ±15kV for Human Body Model. This series offers a 120kbps data rate under load, small ceramic type 0.1µF charge pump capacitors and overall ruggedness for commercial applications. Features include MaxLinear’s BiCMOS design which allows low power operation without sacrificing performance. The series is available in lead free packages and includes commercial an.

SP202E : The SP202E, SP232E, SP233E, SP310E and SP312E devices are a family of line driver and receiver pairs that meets the specifications of RS-232 and V.28 serial protocols. The devices are pinto-pin compatible with Exar's SP232A, SP233A, SP310A and SP312A devices as well as popular industry standard pinouts. The ESD tolerance has been improved on these devices to over +/-15kV for Human Body Model. This series offer a 120kbps data rate under load, small ceramic type 0.1μF charge pump capacitor.

SP203 : Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process features low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency. TM SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 12.0 Watts Single Ended Package Style AP HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE o ABSOLUTE MAXIMUM RATINGS ( T = 25 C ) Total Device Dissipation 40 Watts Junction to Case Thermal Resistance o 5.00 C/W Maximum Junction Temperature o 200 C Storage Temperature o o -65 C to 150 C D.

SP2030 : Green Product Sa mHop Microelectronics C orp. Dual N-Channel Enhancement Mode Field Effect Transistor SP2030 Ver 2.1 PRODUCT SUMMARY VDSS 20V ID RDS(ON) (mΩ) Max 5.5 @ VGS=4.5V 6.5 @ VGS=3.9V 46A 7.0 @ VGS=3.1V 7.5 @ VGS=2.5V FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. D1/D2 DFN 3X3 PIN 1 G1 G2 S1 S2 ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID Drain Current-Continuous c IDM -Pulsed a c TA=25°C TA=70°C PD Maximum Power Dissipation TA=25°C TA=70°C TJ, TSTG Operating Junction and Storage Temperature Range THERMAL CHARACTERISTI.

SP2038 : SP2038 3.5W DATA SHEET SP2038 3.5W :V1.1 :20100929 V1.1 1 、 SP2038 3.5W SP2038 3.5W、 AB 。, 6V ,4Ω ,, THD10%、 3.5W 。 SP2038 ,,。 SP2038 ,,(SE), (BTL)。 SP2038 、, 。 、 ● ● ● LCD 、 ● / ● DVD 、 、 ● 6V ,4Ω , THD10%、 3.5W () ● , 0. 2μA ● : 2.0V~6.5V ● ● ● ● , ● DIP-16、SOP-16、TSSOP-20 、 6.8 -40~85 150 -65~150 260(5 ) V ℃ ℃ ℃ ℃ V1.1 2 SP2038 3.5W 、 2.0~6.5 -20~85 V ℃ 、 V1.1 3 、 SP2038 3.5W 1、SP2038P(DIP-16)、SP2038F(SOP-16): 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 Shutdown GND +OUTA VDD -OUTA -INA GND +INA +INB Bypass -INB -OUTB VDD +OUTB GND HP-IN A A A A B B B B V1.1 4 SP2038 3.5W 2、SP2038FN(TSSOP-20): 1 2 3 4 5 6 7 8 9 10 1.

SP2038P : www.DataSheet.co.kr ³ ÏÉ Ðî ¾Û ÎÚ ¢Ê ¿ Æ ¼ Ó Þ ¹ « Ë AB2.7W 2038 2.2W。5V,4Ω, THD10%、2.2W ;4Ω,2.5W 。, 。 2038,,, 2038 。 2038 ,,, ()。 SP SP SP SP SSSP SP 2038 1、(32Ω),75mW ,THD+N0.5% 2、 0. 1µA ( ) 3、: 2.0V~5.5V 4、 5、 6、 7、 1、 2、 / 3、 :DIP-16 1/5 ÌÕ Ó1341859165¡¾»¶Ó-À´µç¿0755-36915 : 1511 :0755- 82927451 / 82927423 :0755-83505459 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr ÉîÛÚÊÐ³Ï ¾Î¢¿Æ¼ Ó Þ¹«Ë AB2.7W SSSP SP 2038 3/5 ÌÕ Ó13418591615¡¾»¶Ó-À´µç¡¿0755-36931965 :1511 :0755- 82927451 / 82927423 :0755-83505459 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr ÉîÛÚÊг.

SP204 : Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process features low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency. TM SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 15.0 Watts Single Ended Package Style AP HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE o ABSOLUTE MAXIMUM RATINGS ( T = 25 C ) Total Device Dissipation 50 Watts Junction to Case Thermal Resistance o 3.40 C/W Maximum Junction Temperature o 200 C Storage Temperature o o -65 C to 150 C D.




Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)