DatasheetsPDF.com

BB857

Infineon Technologies AG
Part Number BB857
Manufacturer Infineon Technologies AG
Description Silicon Tuning Diode
Published Jun 3, 2005
Detailed Description Silicon Tuning Diode • For SAT tuners • High capacitance ratio • Low series resistance • Excellent uniformity and matchi...
Datasheet PDF File BB857 PDF File

BB857
BB857

Overview
Silicon Tuning Diode • For SAT tuners • High capacitance ratio • Low series resistance • Excellent uniformity and matching due to "in-line" matching assembly procedure • Pb-free (RoHS compliant) package BB837/BB857.
.
.
BB837 BB857 BB857-02V  Type BB837 BB857* BB857-02V * Not for new design Package SOD323 SCD80 SC79 Configuration single single single Marking white M OO P Maximum Ratings at TA = 25 °C, unless otherwise specified Parameter Symbol Diode reverse voltage Peak reverse voltage R ≥ 5kΩ VR VRM Forward current Operating temperature range Storage temperature IF Top TStg Value 30 35 20 -55 .
.
.
150 -55 .
.
.
150 Unit V mA °C 1 2014-03-31 BB837/BB857.
.
.
Electrical Characteristics at TA = 25 °C, unless otherwise specified Parameter Symbol Values min.
typ.
max.
DC Characteristics Reverse current VR = 30 V VR = 30 V, TA = 85 °C IR - - 10 - - 200 AC Characteristics Diode capacitance VR = 1 V, f = 1 MHz VR = 25 V, f = 1 MHz VR = 28 V, f = 1 MHz CT 6 6.
6 7.
2 0.
5 0.
55 0.
65 0.
45 0.
52 - Capacitance ratio VR = 1 V, VR = 25 V, f = 1 MHz Capacitance ratio VR = 1 V, VR = 28 V, f = 1 MHz Capacitance matching1) VR = 1V .
.
.
28V, f = 1 MHz, 7 diodes sequence CT1/CT25 10.
2 CT1/CT28 9.
7 ∆CT/CT - 12 12.
7 - 5 Series resistance VR = 5 V, f = 470 MHz rS - 1.
5 - 1For details please refer to Application Note 047 Unit nA pF - % Ω 2 2014-03-31 BB837/BB857.
.
.
Diode capacitance CT = ƒ (VR) f = 1MHz Normalized diode capacitance C(TA)/C(25°C)= ƒ(TA); f = 1MHz CT CTA/C25 10 pF 8 7 6 5 4 3 2 1 010 0 10 1 V 10 2 VR 1.
035 - 1.
025 1.
02 1.
015 1.
01 1V 2V 25V 28V 1.
005 1 0.
995 0.
99 0.
985 0.
98 0.
975-30 -10 10 30 50 70 °C 100 TA IR IR Reverse current IR = ƒ (TA) VR = 28V 10 3 pA 10 2 Reverse current IR = ƒ(VR) TA = Parameter 10 3 pA 80°C 60°C 10 2 28°C 10 1 10 1 10 0 10 0 -30 -10 10 30 50 70 °C 100 TA 10 -1 10 0 3 10 1 V 10 2 VR 2014-03-31 Package SC79 BB837/BB857.
.
.
4 2014-03-31 Package SCD80 Package Outline 0.
8 ±0.
1 2 Cathode m...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)