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BC212

Part Number BC212
Manufacturer Motorola
Title Amplifier PNP Transistors
Description MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors Order this document by BC212/D PNP Silicon COLLECTOR 3 2 BASE 1 EMITTER BC212,B BC...
Features IC =
  –10 mA, IE = 0) Emitter
  – Base Breakdown Voltage (IE =
  –10 mAdc, IC = 0) Collector
  –Emitter Leakage Current (VCB =
  –30 V) Emitter
  –Base Leakage Current (VEB =
  –4.0 V, IC = 0) BC212 BC213 BC214 BC212 BC213 BC214 BC212 BC213 BC214 BC212 BC213 BC214 BC212 BC213 BC214 Symbol V(BR)CEO Min
  –50
  –30
  –30 ...

File Size 107.45KB
Datasheet BC212 PDF File







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BC211 : .

BC212 : The CENTRAL SEMICONDUCTOR BC212 series are silicon PNP transistors designed for low noise, high gain amplifier applications. TO-92 CASE MARKING: FULL PART NUMBER MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC PD TJ, Tstg ΘJA 60 50 5.0 200 300 -65 to +150 416 ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN ICBO VCB=30V IEBO VEB=4.0V BVCBO IC=10μA 60 BVCEO IC=2.0mA 50 BVEBO IE=10μA 5.0 VCE(SAT) IC=10mA, IB=500μA VCE(SAT) IC=100mA, IB=5.0mA VBE(SAT) .

BC212 : SYMBOL BC212 BC213 BC214 UNITS Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Power Dissipation @ Ta=25ºC Derate Above 25ºC Power Dissipation @ Tc=25ºC Derate Above 25ºC Operating And Storage Junction Temperature Range THERMAL RESISTANCE Junction to ambient Junction to case VCEO VCBO VEBO IC PD PD Tj, Tstg Rth(j-a) Rth(j-c) 50 30 30 60 45 45 5 100 350 2.8 1 8 -55 to +150 V V V mA mW mW/ºC W mW/ºC ºC 357 ºC/W 125 ºC/W Continental Device India Limited Data Sheet Page 1 of 4 PNP SILICON PLANAR EPITAXIAL TRANSISTORS BC212, BC212A, BC212B BC213, BC2.

BC212 : .

BC212 : .

BC212 : Elektronische Bauelemente BC212 -0.1A , -60V PNP Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURE General Purpose Switching and Amplification. CLASSIFICATION OF hFE Product-Rank BC212 Range 140~600 BC212B 140~400 BC212C 350~600 TO-92 Base 2 1 Emitter 2 Base 3 Collector 3 Collector 1 Emitter REF. A B C D E Millimeter Min. Max. 4.40 4.70 4.30 4.70 12.70 - 3.30 3.81 0.36 0.56 REF. F G H J K Millimeter Min. Max. 0.30 0.51 1.27 TYP. 1.10 1.40 2.42 2.66 0.36 0.76 ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Ratings Collector to Base Voltage Collector to Emitter Voltage Emit.

BC212 : BC212 PNP Silicon Epitaxial Planar Transistor for general purpose amplifier Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Range Characteristics at Ta = 25 OC Parameter DC Current Gain at -VCE = 5 V, -IC = 10 µA at -VCE = 5 V, -IC = 2 mA Collector Base Cutoff Current at -VCB = 30 V Emitter Base Cutoff Current at -VEB = 4 V Collector Base Breakdown Voltage at -IC = 10 µA Collector Emitter Breakdown Voltage at -IC = 2 mA Emitter Base Breakdown Voltage at -IE = 10 µA Collector Emitter Saturation Voltage at -IC = 100 mA, -IB = 5 mA Base Emitte.

BC212A : The CENTRAL SEMICONDUCTOR BC212 series are silicon PNP transistors designed for low noise, high gain amplifier applications. TO-92 CASE MARKING: FULL PART NUMBER MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC PD TJ, Tstg ΘJA 60 50 5.0 200 300 -65 to +150 416 ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN ICBO VCB=30V IEBO VEB=4.0V BVCBO IC=10μA 60 BVCEO IC=2.0mA 50 BVEBO IE=10μA 5.0 VCE(SAT) IC=10mA, IB=500μA VCE(SAT) IC=100mA, IB=5.0mA VBE(SAT) .

BC212A : SYMBOL BC212 BC213 BC214 UNITS Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Power Dissipation @ Ta=25ºC Derate Above 25ºC Power Dissipation @ Tc=25ºC Derate Above 25ºC Operating And Storage Junction Temperature Range THERMAL RESISTANCE Junction to ambient Junction to case VCEO VCBO VEBO IC PD PD Tj, Tstg Rth(j-a) Rth(j-c) 50 30 30 60 45 45 5 100 350 2.8 1 8 -55 to +150 V V V mA mW mW/ºC W mW/ºC ºC 357 ºC/W 125 ºC/W Continental Device India Limited Data Sheet Page 1 of 4 PNP SILICON PLANAR EPITAXIAL TRANSISTORS BC212, BC212A, BC212B BC213, BC2.

BC212B : SYMBOL BC212 BC213 BC214 UNITS Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Power Dissipation @ Ta=25ºC Derate Above 25ºC Power Dissipation @ Tc=25ºC Derate Above 25ºC Operating And Storage Junction Temperature Range THERMAL RESISTANCE Junction to ambient Junction to case VCEO VCBO VEBO IC PD PD Tj, Tstg Rth(j-a) Rth(j-c) 50 30 30 60 45 45 5 100 350 2.8 1 8 -55 to +150 V V V mA mW mW/ºC W mW/ºC ºC 357 ºC/W 125 ºC/W Continental Device India Limited Data Sheet Page 1 of 4 PNP SILICON PLANAR EPITAXIAL TRANSISTORS BC212, BC212A, BC212B BC213, BC2.

BC212B : MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors Order this document by BC212/D PNP Silicon COLLECTOR 3 2 BASE 1 EMITTER BC212,B BC213 BC214 MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg BC 212 –50 –60 BC 213 –30 –45 –5.0 –100 350 2.8 1.0 8.0 – 55 to +150 BC 214 –30 –45 Unit Vdc Vdc Vdc mAdc mW mW/°C Watts mW/°C °C 1 2 3 CASE 29–04, STYLE 17 TO–92 (TO–226AA) THERMAL CHARACTERISTICS Characteristi.

BC212B : www.DataSheet4U.com BC212B Amplifier Transistors PNP Silicon Features • These are Pb−Free Devices* http://onsemi.com MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current − Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg Value −50 −60 −5.0 −100 350 2.8 1.0 8.0 −55 to +150 Unit Vdc Vdc Vdc mAdc mW mW/°C W mW/°C °C TO−92 CASE 29 STYLE 17 12 2 BASE COLLECTOR 1 3 EMITTER 1 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Ambient Thermal Resistance, Ju.

BC212B : BC212B BC212B PNP General Purpose Amplifier • This device is designed for general purpose amplifier application at collector currents to 100mA. • Sourced from process 68. 1 TO-92 1. Collector 2. Base 3. Emitter Absolute Maximum Ratings* TC=25°C unless otherwise noted Symbol VCEO VCBO VEBO IC TJ, TSTG Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Operating and Storage Junction Temperature Range Value 50 60 5 100 - 55 ~ 150 Units V V V mA °C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1. These ratings are based on a maximum junction temperature of 15.

BC212B : The CENTRAL SEMICONDUCTOR BC212 series are silicon PNP transistors designed for low noise, high gain amplifier applications. TO-92 CASE MARKING: FULL PART NUMBER MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC PD TJ, Tstg ΘJA 60 50 5.0 200 300 -65 to +150 416 ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN ICBO VCB=30V IEBO VEB=4.0V BVCBO IC=10μA 60 BVCEO IC=2.0mA 50 BVEBO IE=10μA 5.0 VCE(SAT) IC=10mA, IB=500μA VCE(SAT) IC=100mA, IB=5.0mA VBE(SAT) .

BC212L : TO-18 OPTION STD TO-5 OPTION STD TO-92 STANDARD STRAIGHT LEADCLIP DIMENSION NO LEAD CLIP NO LEAD CLIP NO LEADCLIP QUANTITY 2.0 K / BOX 1.5 K / BOX 2.0 K / BOX BULK OPTION See Bulk Packing Information table Anti-static Bubble Sheets FSCINT Label 2000 units per EO70 box for std option 114mm x 102mm x 51mm Immediate Box 5 EO70 boxes per intermediate Box 530mm x 130mm x 83mm Intermediate box Customized Label FSCINT Label 10,000 units maximum per intermediate box for std option September 1999, Rev. B TO-92 Tape and Reel Data and Package Dimensions, continued TO-92 Reeling Style Configuration: Figure 2.0 Machine Option “A” (H) Machine Option “E” (J) Style “A”, D26Z, D70Z (s/h) Style “E”.




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