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BC237 Datasheet PDF


Part Number BC237
Manufacturer Philipss
Title NPN Transistor
Description NPN transistor in a TO-92; SOT54 plastic package. PNP complements: BC307; BC307B. PINNING PIN 1 2 3 emitter base collector BC237; BC237B DESCRIP...
Features
• Low current (max. 100 mA)
• Low voltage (max. 45 V). APPLICATIONS
• General purpose switching and amplification. DESCRIPTION NPN transistor in a TO-92; SOT54 plastic package. PNP complements: BC307; BC307B. PINNING PIN 1 2 3 emitter base collector BC237; BC237B DESCRIPTION 1 handbook, halfpage ...

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Datasheet BC237 PDF File








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BC237 : SYMBOL Collector Emitter Voltage VCEO Collector Emitter Voltage Emitter Base Voltage VCES VEBO Collector Current Continuous IC Power Dissipation at Ta=25ºC PD Derate Above 25ºC Power Dissipation at Tc=25ºC PD Derate Above 25ºC Operating And Storage Junction Temperature Range Tj, Tstg BC237 45 50 6.0 BC238 25 30 5.0 100 350 2.8 1.0 8.0 - 55 to +150 THERMAL RESISTANCE Junction to Ambient in free air Junction to Case Rth (j-a) Rth (j-c) 357 125 ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION Collector Emitter Voltage VCEO IC=2mA, IB=0 BC237 Emitter Base Voltage VEBO BC238/BC239 IE=10µA,.

BC237 : MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors Order this document by BC237/D NPN Silicon COLLECTOR 1 2 BASE 3 EMITTER BC237,A,B,C BC238B,C BC239,C MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector – Emitter Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCES VEBO IC PD PD TJ, Tstg BC 237 45 50 6.0 BC 238 25 30 5.0 100 350 2.8 1.0 8.0 – 55 to +150 BC 239 25 30 5.0 Unit Vdc Vdc Vdc mAdc mW mW/°C Watts mW/°C °C 1 2 3 CASE 29–04, STYLE 17 TO–92 (TO–226AA) THERMAL CHARACTERISTICS C.

BC237 : www.DataSheet4U.com BC237, BC237B, BC237C, BC239C Amplifier Transistors NPN Silicon Features http://onsemi.com COLLECTOR 1 2 BASE Symbol VCEO BC237 BC239 Collector −Emitter Voltage BC237 BC239 Collector −Emitter Voltage BC237 BC239 Collector Current − Continuous Total Power Dissipation @ TA = 25°C Derate above TA = 25°C Total Power Dissipation @ TA = 25°C Derate above TA = 25°C Operating and Storage Temperature Range IC PD PD TJ, Tstg VEBO 6.0 5.0 100 350 2.8 1.0 8.0 −55 to +150 mAdc mW mW/°C W mW/°C °C 12 3 VCES 50 30 Vdc TO−92 CASE 29 STYLE 17 45 25 Vdc Value Unit Vdc 3 EMITTER • Pb−Free Packages are Available* MAXIMUM RATINGS Rating Collector −Emitter Voltage MARKING DIAGRAM BC23 xy AY.

BC237 : BC237/238/239 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS • LOW NOISE: BC239 TO-92 ABSOLUTE MAXIMUM RATINGS (TA=25° C) Characteristic Collector-Emitter Voltage : BC237 : BC238/239 Collector-Emitter Voltage : BC237 : BC238/239 Emitter-Base Voltage : BC237 : BC238/239 Collector Current (DC) Collector Dissipation Junction Temperature Storage Temperature Symbol VCES 50 30 VCEO 45 25 VEBO 6 5 100 500 150 -55 ~ 150 V V mA mW °C °C 1. Collector 2. Base 3. Emitter V V Rating Unit V V IC PC TJ T STG ELECTRICAL CHARACTERISTICS (TA=25° C) Characteristic Collector-Emitter Breakdown Voltage :BC237 : BC238/239 Emitter Base Breakdown Voltage : BC237 : BC238/239 Collector Cut-.

BC237 : .

BC237 : BC237...BC239 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications The transistor is subdivided into three groups, A, B, and C, according to its DC current gain. Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Range 1. Collector 2. Base 3. Emitter TO-92 Plastic Package Symbol BC237 BC238 BC239 VCBO VCEO VEBO IC Ptot 50 45 6 30 30 25 25 5 100 500 Tj 150 TS - 55 to + 150 Unit V V V mA mW OC OC Characteristics at Ta = 25 OC Parameter DC Current Gain at VCE = 5 V, IC = 2 mA Current Gain Group A B C Col.

BC237 : SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. LOW NOISE AMPLIFIER APPLICATION. FEATURES High Voltage : BC237 VCEO=45V. Low Noise : BC239 NF=0.2dB(Typ.), 3dB(Max.) (VCE=6V, IC=0.1mA, f=1kHz). For Complementary With PNP type BC307/308/309. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC BC237 Collector-Base Voltage BC238 BC239 BC237 Collector-Emitter Voltage BC238 BC239 BC237 Emitter-Base Voltage BC238 BC239 BC237 Collector Current BC238 BC239 BC237 Emitter Current BC238 BC239 Collector Power Dissipation Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO VEBO IC IE PC Tj Tstg RATING 50 30 30 45 20 20 6 5 5 100 100 50 -100 -50 -50 625 150 -55 150 UNIT.

BC237A : SYMBOL Collector Emitter Voltage VCEO Collector Emitter Voltage Emitter Base Voltage VCES VEBO Collector Current Continuous IC Power Dissipation at Ta=25ºC PD Derate Above 25ºC Power Dissipation at Tc=25ºC PD Derate Above 25ºC Operating And Storage Junction Temperature Range Tj, Tstg BC237 45 50 6.0 BC238 25 30 5.0 100 350 2.8 1.0 8.0 - 55 to +150 THERMAL RESISTANCE Junction to Ambient in free air Junction to Case Rth (j-a) Rth (j-c) 357 125 ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION Collector Emitter Voltage VCEO IC=2mA, IB=0 BC237 Emitter Base Voltage VEBO BC238/BC239 IE=10µA,.

BC237A : MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors Order this document by BC237/D NPN Silicon COLLECTOR 1 2 BASE 3 EMITTER BC237,A,B,C BC238B,C BC239,C MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector – Emitter Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCES VEBO IC PD PD TJ, Tstg BC 237 45 50 6.0 BC 238 25 30 5.0 100 350 2.8 1.0 8.0 – 55 to +150 BC 239 25 30 5.0 Unit Vdc Vdc Vdc mAdc mW mW/°C Watts mW/°C °C 1 2 3 CASE 29–04, STYLE 17 TO–92 (TO–226AA) THERMAL CHARACTERISTICS C.

BC237B : SYMBOL Collector Emitter Voltage VCEO Collector Emitter Voltage Emitter Base Voltage VCES VEBO Collector Current Continuous IC Power Dissipation at Ta=25ºC PD Derate Above 25ºC Power Dissipation at Tc=25ºC PD Derate Above 25ºC Operating And Storage Junction Temperature Range Tj, Tstg BC237 45 50 6.0 BC238 25 30 5.0 100 350 2.8 1.0 8.0 - 55 to +150 THERMAL RESISTANCE Junction to Ambient in free air Junction to Case Rth (j-a) Rth (j-c) 357 125 ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION Collector Emitter Voltage VCEO IC=2mA, IB=0 BC237 Emitter Base Voltage VEBO BC238/BC239 IE=10µA,.

BC237B : NPN transistor in a TO-92; SOT54 plastic package. PNP complements: BC307; BC307B. PINNING PIN 1 2 3 emitter base collector BC237; BC237B DESCRIPTION 1 handbook, halfpage 2 3 3 2 1 MAM182 Fig.1 Simplified outline (TO-92; SOT54) and symbol. QUICK REFERENCE DATA SYMBOL VCBO VCEO ICM Ptot hFE PARAMETER collector-base voltage collector-emitter voltage peak collector current total power dissipation DC current gain BC237 BC237B fT transition frequency IC = 10 mA; VCE = 5 V; f = 100 MHz Tamb ≤ 25 °C IC = 2 mA; VCE = 5 V 120 200 100 460 460 − MHz open emitter open base CONDITIONS − − − − MIN. MAX. 50 45 200 500 V V mA mW UNIT 1997 Sep 04 2 Philips Semiconductors Product specification NPN.

BC237B : MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors Order this document by BC237/D NPN Silicon COLLECTOR 1 2 BASE 3 EMITTER BC237,A,B,C BC238B,C BC239,C MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector – Emitter Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCES VEBO IC PD PD TJ, Tstg BC 237 45 50 6.0 BC 238 25 30 5.0 100 350 2.8 1.0 8.0 – 55 to +150 BC 239 25 30 5.0 Unit Vdc Vdc Vdc mAdc mW mW/°C Watts mW/°C °C 1 2 3 CASE 29–04, STYLE 17 TO–92 (TO–226AA) THERMAL CHARACTERISTICS C.

BC237B : BC237B Amplifier Transistors NPN Silicon Features • Pb−Free Packages are Available* MAXIMUM RATINGS Rating Collector −Emitter Voltage Collector −Emitter Voltage Collector −Emitter Voltage Collector Current − Continuous Total Power Dissipation @ TA = 25°C Derate above TA = 25°C Total Power Dissipation @ TA = 25°C Derate above TA = 25°C Operating and Storage Temperature Range Symbol Value Unit VCEO VCES VEBO IC PD 45 Vdc 50 Vdc 6.0 Vdc 100 mAdc 350 mW 2.8 mW/°C PD 1.0 W 8.0 mW/°C TJ, Tstg −55 to +150 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Ambient RqJA 357 °C/W Thermal Resistance, Junction−to−Case RqJC 125 °C/W.

BC237C : SYMBOL Collector Emitter Voltage VCEO Collector Emitter Voltage Emitter Base Voltage VCES VEBO Collector Current Continuous IC Power Dissipation at Ta=25ºC PD Derate Above 25ºC Power Dissipation at Tc=25ºC PD Derate Above 25ºC Operating And Storage Junction Temperature Range Tj, Tstg BC237 45 50 6.0 BC238 25 30 5.0 100 350 2.8 1.0 8.0 - 55 to +150 THERMAL RESISTANCE Junction to Ambient in free air Junction to Case Rth (j-a) Rth (j-c) 357 125 ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION Collector Emitter Voltage VCEO IC=2mA, IB=0 BC237 Emitter Base Voltage VEBO BC238/BC239 IE=10µA,.

BC237C : MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors Order this document by BC237/D NPN Silicon COLLECTOR 1 2 BASE 3 EMITTER BC237,A,B,C BC238B,C BC239,C MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector – Emitter Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCES VEBO IC PD PD TJ, Tstg BC 237 45 50 6.0 BC 238 25 30 5.0 100 350 2.8 1.0 8.0 – 55 to +150 BC 239 25 30 5.0 Unit Vdc Vdc Vdc mAdc mW mW/°C Watts mW/°C °C 1 2 3 CASE 29–04, STYLE 17 TO–92 (TO–226AA) THERMAL CHARACTERISTICS C.




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