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BC307

Part Number	BC307
Manufacturer	Motorola
Description	Amplifier Transistors
Published	Jun 3, 2005
Detailed Description	MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors PNP Silicon COLLECTOR 1 2 BASE 3 EMITTER MAXIMUM RATINGS R...
Datasheet	BC307 PDF File

Overview

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors PNP Silicon COLLECTOR 1 2 BASE 3 EMITTER MAXIMUM RATINGS Rating Symbol BC307, B, C BC308C Unit Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C VCEO VCBO VEBO IC PD –45 –50 –5.
0 –100 350 2.
8 –25 –30 Vdc Vdc Vdc mAdc mW mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 1.
0 Watts 8.
0 mW/°C Operating and Storage Junction Temperature Range TJ, Tstg – 55 to +150 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 357 °C/W Thermal Resistance, Junction to Case RqJC 125 °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage (IC = –2.
0 mAdc, IB = 0) Emitter – Base Breakdown Voltage (IE = –100 mAdc, IC = 0) Collector–Emitter Leakage Curr...

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