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BC307

Philipss
Part Number BC307
Manufacturer Philipss
Description PNP general purpose transistors
Published Jun 3, 2005
Detailed Description DISCRETE SEMICONDUCTORS DATA SHEET andbook, halfpage M3D186 BC307; BC307B PNP general purpose transistors Product spe...
Datasheet PDF File BC307 PDF File

BC307
BC307


Overview
DISCRETE SEMICONDUCTORS DATA SHEET andbook, halfpage M3D186 BC307; BC307B PNP general purpose transistors Product specification File under Discrete Semiconductors, SC04 1997 Mar 07 Philips Semiconductors Product specification PNP general purpose transistors BC307; BC307B FEATURES • Low current (max.
100 mA) • Low voltage (max.
45 V).
APPLICATIONS • General purpose switching and amplification.
DESCRIPTION PNP transistor in a TO-92; SOT54 plastic package.
NPN complements: BC237 and BC237B.
PINNING PIN 1 2 3 emitter base collector DESCRIPTION 1 handbook, halfpage 2 3 3 2 1 MAM281 Fig.
1 Simplified outline (TO-92; SOT54) and symbol.
QUICK REFERENCE DATA SYMBOL VCBO VCEO ICM Ptot hFE PARAMETER collector-base voltage collector-emitter voltage peak collector current total power dissipation DC current gain BC307 BC307B fT transition frequency IC = −10 mA; VCE = −5 V; f = 100 MHz Tamb ≤ 25 °C IC = −2 mA; VCE = −5 V 125 222 100 455 455 − MHz open emitter open base CONDITIONS − − − − MIN.
MAX.
−50 −45 −200 500 V V mA mW UNIT 1997 Mar 07 2 Philips Semiconductors Product specification PNP general purpose transistors LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1.
Transistor mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1.
Transistor mounted on an FR4 printed-circuit board.
PARAMETER thermal resistance from junction to ambient CONDITIONS note 1 PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 CONDITIONS open emitter open base open collector − − − − − − − −65 − −65 BC307; BC307B MIN.
MAX.
−50 −45 −5 −100 −200 −200 500 +150 150 +150 V V V UNIT mA mA mA mW °C °C °C VALUE 250 UNIT K/W 1997 Mar 07 3 Philips Semiconductors ...



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