DatasheetsPDF.com

SP741

Part Number	SP741
Manufacturer	Polyfet RF Devices
Description	SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
Published	Jun 7, 2005
Detailed Description	polyfet rf devices SP741 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF ...
Datasheet	SP741 PDF File

Overview

polyfet rf devices SP741 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications.
Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.
"Polyfet" process features low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency.
TM SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 25.
0 Watts Single Ended Package Style AP HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE o ABSOLUTE MAXIMUM RATINGS ( T = 25 C ) Total Device Dissipation 60 Watts Junction to Case Thermal Resistance o 2.
80 C/W Maximum Junction Temperature o 2...

Similar Datasheet

SP70001 700MHz Low-loss SAW Filter 47MHz Bandwidth - SIPAT
SP701 SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR - Polyfet RF Devices
SP702 SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR - Polyfet RF Devices
SP703 Low Power Microprocessor Supervisory with Battery Switch-Over - Sipex
SP704 Low Power Microprocessor Supervisory with Battery Switch-Over - Sipex
SP705 Low Power Microprocessor Supervisory Circuits - Sipex
SP705 Low Power Microprocessor Supervisory Circuits - Exar
SP706 Low Power Microprocessor Supervisory Circuits - Sipex
SP706 Low Power Microprocessor Supervisory Circuits - Exar
SP706P +3.0V/+3.3V Low Power Microprocessor Supervisory Circuits - Sipex

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)