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MPSA92

Part Number	MPSA92
Manufacturer	PHILIPS
Description	PNP high-voltage transistor
Published	Jun 14, 2005
Detailed Description	DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 MPSA92 PNP high-voltage transistor Product speciﬁcation Supe...
Datasheet	MPSA92 PDF File

Overview

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 MPSA92 PNP high-voltage transistor Product speciﬁcation Supersedes data of 1997 Apr 22 1999 Apr 27 Philips Semiconductors Product speciﬁcation PNP high-voltage transistor FEATURES • Low current (max.
500 mA) • High voltage (max.
300 V).
APPLICATIONS • General purpose switching and amplification.
DESCRIPTION PNP high-voltage transistor in a TO-92; SOT54 plastic package.
NPN complement: MPSA42.
PINNING PIN 1 2 3 collector base emitter MPSA92 DESCRIPTION 1 handbook, halfpage 2 3 1 2 3 MAM280 Fig.
1 Simplified outline (TO-92; SOT54) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C CONDITIONS open emitter open base open collector − − − − − − − −65 − −65 MIN.
MAX.
−300 −300 −5 −100 −200 −100 625 +150 150 +150 V V V mA mA mA mW °C °C °C UNIT 1999 Apr 27 2 Philips Semiconductors Product speciﬁcation PNP high-voltage transistor THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1.
Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS Tj = 25 °C unless otherwise speciﬁed.
SYMBOL ICBO IEBO hFE PARAMETER collector cut-off current emitter cut-off current DC current gain CONDITIONS IE = 0; VCB = −200 V IC = 0; VBE = −3 V VCE = −10 V; note 1 IC = −1 mA IC = −10 mA IC = −30 mA VCEsat VBEsat Cc fT Note 1.
Pulse test: tp ≤ 300 µs; δ ≤ 0.
02.
collector-emitter saturation voltage IC = −20 mA; IB = −2 mA; note 1 base-emitter saturation voltage collector capacitance transition frequency IC = −20 mA; IB = −2 mA; note 1 IE =ie = 0; VCB = −20 V; f = 1 MHz IC = −10 mA; VCE = −20 V; f = 100 MHz 25 40 25 − − − 50 − − − − − MIN.
PARAMETER thermal resistance from junction to...

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