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IRG4BC20SD

Part Number	IRG4BC20SD
Manufacturer	IRF
Description	INSULATED GATE BIPOLAR TRANSISTOR
Published	Aug 23, 2005
Detailed Description	PD- 91793 IRG4BC20SD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Extremely low volt...
Datasheet	IRG4BC20SD PDF File

Overview

PD- 91793 IRG4BC20SD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Extremely low voltage drop 1.
4Vtyp.
@ 10A • S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4 KHz in brushless DC drives.
• Very Tight Vce(on) distribution • IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations • Industry standard TO-220AB package C Standard Speed IGBT VCES = 600V G E VCE(on) typ.
= 1.
4V @VGE = 15V, IC = 10A n-cha nn el Benefits • Generation 4 IGBT's offer highest efficiencies available • IGBT's optimized for specific application conditions • HEXFRED diodes optim...

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