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MPS6515

Fairchild Semiconductor
Part Number MPS6515
Manufacturer Fairchild Semiconductor
Description NPN General Purpose Amplifier
Published Aug 31, 2005
Detailed Description MPS6515/MMBT6515 MPS6515/MMBT6515 NPN General Purpose Amplifier • This device is designed as a general purpose amplifie...
Datasheet PDF File MPS6515 PDF File

MPS6515
MPS6515

Overview
MPS6515/MMBT6515 MPS6515/MMBT6515 NPN General Purpose Amplifier • This device is designed as a general purpose amplifier and switch.
• The useful dynamic range extends to 100mA as a switch and to 100MHz as an amplifier.
1 1.
Emitter 2.
Base 3.
Collector TO-92 3 2 SOT-23 1 Mark: 3J 1.
Base 2.
Emitter 3.
Collector Absolute Maximum Ratings* TC=25°C unless otherwise noted Symbol VCEO VCBO VEBO IC TJ, Tstg Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector current Junction and Storage Temperature - Continuous Value 25 40 4.
0 200 -55 ~ +150 Units V V V mA °C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits.
The factory should be consulted on applications involving pulsed or low duty cycle operations Electrical Characteristics TC=25°C unless otherwise noted Symbol Parameter Test Condition IC = 0.
5mA, IB = 0 IC =10µA, IE = 0 IC = 10µA, IC = 0 VCE = 30V, IE = 0 VCB = 30V, IE = 0, T = 60°C IC = 2.
0mA, VCE = 10V IC = 100mA, VCE = 10V IC = 50mA, IB = 5.
0mA VCB = 10V, IE = 0, f = 100kHz 250 150 Min.
25 40 4.
0 50 1.
0 500 0.
5 3.
5 V pF Max.
Units V V V nA µA Off Characteristics Collector-Emitter Breakdown Voltage V(BR)CEO V(BR)CBO V(BR)EBO ICBO ICBO hFE VCE(sat) Cobo Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Collector Cutoff Current DC Current Gain Collector-Emitter Saturation Voltage Output Capacitance On Characteristics * Small Signal Characteristics * Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.
0% Thermal Characteristics TA=25°C unless otherwise noted Symbol PD RθJC RθJA Parameter Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Max.
MPS6515 625 5.
0 83.
3 200 357 *MMBT6515 350 2.
8 Units mW mW/°C °C/W °C/W * Device mounted on FR-4 PCB 1...


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