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4N600

Part Number	4N600
Manufacturer	ETC
Description	N-Channel MOSFET
Published	Oct 18, 2005
Detailed Description	Bay Linear Inspire the Linear Power N-Channel Field Effect Transistor 4N600(3600) Description The Bay Linear n-channe...
Datasheet	4N600 PDF File

Overview

Bay Linear Inspire the Linear Power N-Channel Field Effect Transistor 4N600(3600) Description The Bay Linear n-channel power field effect transistors are produced using high cell density DMOS technology , These devices are particularly suited for high voltage applications such as automotive and other battery powered circuits where fast switching, low in-line power loss and resistance to transistors are needed.
The TO-220 is offered in a 3-pin is universally preferred for all commercial-industrial applications at power dissipation level to approximately to 50 watts.
Also, available in a D2 surface mount power package with a power dissipation up to 2 Watts Features • • • Critical DC Electr...

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