DatasheetsPDF.com

SD101BW

General Semiconductor
Part Number SD101BW
Manufacturer General Semiconductor
Description (SD101AW - SD101CW) Schottky Diodes
Published Oct 24, 2005
Detailed Description SD101AW THRU SD101CW Schottky Diodes FEATURES SOD-123 .022 (0.55) ♦ For general purpose applications. ♦ The LL101 serie...
Datasheet PDF File SD101BW PDF File

SD101BW
SD101BW

Overview
SD101AW THRU SD101CW Schottky Diodes FEATURES SOD-123 .
022 (0.
55) ♦ For general purpose applications.
♦ The LL101 series is a metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring.
The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing, and coupling diodes for fast switching and low logic level applications.
case with type designation LL101A thru LL101C and in the DO-35 case with type designations SD101A thru SD101C.
Cathode Mark .
152 (3.
85) .
140 (3.
55) .
112 (2.
85) .
100 (2.
55) Top View max.
.
004 (0.
1) max.
.
053 (1.
35) min.
.
010 (0.
25) max.
.
006 (0.
15) .
067 (1.
70) .
055 (1.
40) ♦ These diodes are also available in the MiniMELF MECHANICAL DATA Dimensions in inches and (millimeters) Case: SOD-123 Plastic Case Weight: approx.
0.
01 g MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 °C ambient temperature unless otherwise specified Symbol Peak Inverse Voltage SD101AW SD101BW SD101CW VRRM VRRM VRRM Ptot IFSM Tj TS Value 60 50 40 4001) 2) 2 1252) – 65 to +1502) Unit V V V mW A °C °C Power Dissipation (Infinite Heat Sink) Max.
Single Cycle Surge 10 µs Square Wave Junction Temperature Storage Temperature Range 2) Valid provided that electrodes are kept at ambient temperature 4/98 SD101AW THRU SD101CW ELECTRICAL CHARACTERISTICS Ratings at 25 °C ambient temperature unless otherwise specified Symbol Reverse Breakdown Voltage at IR = 10 µA SD101AW SD101BW SD101CW SD101AW SD101BW SD101CW SD101AW SD101BW SD101CW SD101AW SD101BW SD101CW SD101AW SD101BW SD101CW V(BR)R V(BR)R V(BR)R IR IR IR VF VF VF VF VF VF Ctot Ctot Ctot trr RthJA Min.
60 50 40 – – – – – – – – – – – – – – Typ.
– – – – – – – – – – – – – – – – – Max.
– – – 200 200 200 0.
41 0.
4 0.
39 1 0.
95 0.
9 2.
0 2.
1 2.
2 1 0.
3 2) Unit V V V nA nA nA V V V V V V pF pF pF ns K/mW Leakage Current at VR = 50 V at VR = 40 V at VR = 30 V Forward Voltage Drop at IF = 1 mA at IF = 15 mA Junction Capacitance at VR = 0 ...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)