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SD101A

General Semiconductor
Part Number SD101A
Manufacturer General Semiconductor
Description (SD101A - SD101C) Schottky Diodes
Published Oct 24, 2005
Detailed Description SD101A THRU SD101C Schottky Diodes DO-35 min. 1.083 (27.5) FEATURES ♦ For general purpose applications. ♦ The LL101 ser...
Datasheet PDF File SD101A PDF File

SD101A
SD101A

Overview
SD101A THRU SD101C Schottky Diodes DO-35 min.
1.
083 (27.
5) FEATURES ♦ For general purpose applications.
♦ The LL101 series is a metal-on-sili- max.
.
150 (3.
8) max.
∅.
079 (2.
0) Cathode Mark min.
1.
083 (27.
5) con Schottky barrier device which is protected by a PN junction guard ring.
The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing, and coupling diodes for fast switching and low logic level applications.
case with type designations SD101AW thru SD101CW and in the MiniMELF case with type designations LL101A thru LL101C.
♦ These diodes are also available in the SOD-123 max.
∅.
020 (0.
52) MECHANICAL DATA Dimensions in inches and (millimeters) Case: DO-35 Glass Case Weight: approx.
0.
13 g MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 °C ambient temperature unless otherwise specified Symbol Peak Inverse Voltage SD101A SD101B SD101C VRRM VRRM VRRM Ptot IFSM Tj TS Value 60 50 40 4001) 2) 2 1251) – 55 to +1501) Unit V V V mW A °C °C Power Dissipation (Infinite Heat Sink) Max.
Single Cycle Surge 10 µs Square Wave Junction Temperature Storage Temperature Range 1) Valid provided that leads at a distance of 4 mm from case are kept at ambient temperature 4/98 SD101A THRU SD101C ELECTRICAL CHARACTERISTICS Ratings at 25 °C ambient temperature unless otherwise specified Symbol Reverse Breakdown Voltage at IR = 10 µA SD101A SD101B SD101C SD101A SD101B SD101C SD101A SD101B SD101C SD101A SD101B SD101C SD101A SD101B SD101C V(BR)R V(BR)R V(BR)R IR IR IR VF VF VF VF VF VF Ctot Ctot Ctot trr RthJA Min.
60 50 40 – – – – – – – – – – – – – – Typ.
– – – – – – – – – – – – – – – – – Max.
– – – 200 200 200 0.
41 0.
4 0.
39 1 0.
95 0.
9 2.
0 2.
1 2.
2 1 0.
31) Unit V V V nA nA nA V V V V V V pF pF pF ns K/mW Leakage Current at VR = 50 V at VR = 40 V at VR = 30 V Forward Voltage Drop at IF = 1 mA at IF = 15 mA Junction Capacitance at VR = 0 V, f = 1 MHz Reverse Recovery Time at IF = IR = 5 mA, recover to 0.
1 ...


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