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2SC4986

Matsushita Electric Industrial
Part Number 2SC4986
Manufacturer Matsushita Electric Industrial
Description NPN Transistor
Published Dec 23, 2005
Detailed Description Power Transistors 2SC4986 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Uni...
Datasheet PDF File 2SC4986 PDF File

2SC4986
2SC4986

Overview
Power Transistors 2SC4986 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm 7.
5±0.
2 4.
5±0.
2 3.
8±0.
2 s Features 10.
8±0.
2 q High collector to base voltage VCBO q High collector to emitter VCEO q Allowing automatic insertion with radial taping 2.
5±0.
1 90° 0.
65±0.
1 0.
85±0.
1 1.
0±0.
1 0.
8C 0.
8C 0.
7±0.
1 0.
7±0.
1 / s Absolute Maximum Ratings (Ta=25˚C) e ) Parameter Symbol Ratings Unit 16.
0±1.
0 c type Collector to base voltage VCBO 500 V n d tage.
ued Collector to emitter voltage VCEO 400 V le s ontin Emitter to base voltage VEBO 7 V a elifecyc disc Peak collector current ICP 4 A n u t ed, Collector current IC 2 A roduc d typ Collector power dissipation PC 1.
5 W te tin ur P tinue Junction temperature Tj 150 ˚C g fo con Storage temperature Tstg –55 to +150 ˚C 2.
5±0.
2 0.
8C 0.
5±0.
1 2.
5±0.
2 0.
4±0.
1 2.
05±0.
2 123 1:Emitter 2:Collector 3:Base MT3 Type Package ain on s des foll,opwlianned dis Electrical Characteristics (Ta=25˚C) c d inclu e type Parameter Symbol Conditions min typ max Unit tinue anc Collector cutoff current ICBO M is con inten Emitter cutoff current IEBO /Dis , ma hFE1 e e Forward current transfer ratio D anc typ hFE2 VCB = 500V, IE = 0 VEB = 5V, IC = 0 VCE = 5V, IC = 100mA VCE = 5V, IC = 1A 100 µA 100 µA 15 8 inten nce Collector to emitter saturation voltage VCE(sat) Ma tena Base to emitter saturation voltage VBE(sat) IC = 1A, IB = 0.
2A IC = 1A, IB = 0.
2A 1 V 1.
5 V ain Transition frequency ed m Turn-on time (plan Storage time Fall time fT VCB = 10V, IE = –200mA, f = 200MHz ton tstg IC = 1A, IB1 = 0.
2A, IB2 = – 0.
2A, VCC = 150V tf 120 MHz 1 µs 3 µs 1 µs 1 Power Transistors 2SC4986 Collector power dissipation PC (W) Base to emitter saturation voltage VBE(sat) (V) Collector to emitter saturation voltage VCE(sat) (V) PC — Ta 2.
0 Without heat sink 1.
6 1.
2 IC — VCE 1.
2 TC=25˚C 1.
0 IB=60mA 0.
8 50mA 40mA VCE(sat) — IC 10 ...


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