DatasheetsPDF.com

2SK198

Panasonic Semiconductor
Part Number 2SK198
Manufacturer Panasonic Semiconductor
Description Silicon N-Channel MOSFET
Published Jan 6, 2006
Detailed Description Silicon Junction FETs (Small Signal) 2SK0198 (2SK198) Silicon N-Channel Junction FET For low-frequency amplification 0....
Datasheet PDF File 2SK198 PDF File

2SK198
2SK198

Overview
Silicon Junction FETs (Small Signal) 2SK0198 (2SK198) Silicon N-Channel Junction FET For low-frequency amplification 0.
40+0.
10 –0.
05 Unit: mm 0.
16+0.
10 –0.
06 s Features q High mutual conductance gm q Low noise type q Mini-type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing.
3 1.
50+0.
25 –0.
05 2.
8+0.
2 –0.
3 1 2 (0.
95) (0.
95) 1.
9±0.
1 2.
90+0.
20 –0.
05 10˚ 1.
1+0.
2 –0.
1 Drain to Source voltage Gate to Drain voltage Drain current Gate current Allowable power dissipation Channel temperature Storage temperature VDSX VGDO ID IG PD Tch Tstg 30 −30 20 10 150 150 −55 to +150 V V mA mA mW °C °C 1: Source 2: Drain 3: Gate 0 to 0.
1 Parameter Symbol Ratings Unit 1.
1+0.
3 –0.
1 s Absolute Maximum Ratings (Ta = 25°C) (0.
65) JEDEC: TO-236 EIAJ: SC-59 Mini3-G1 Package Marking Symbol (Example): 1O s Electrical Characteristics (Ta = 25°C) Parameter Drain to Source cut-off current Gate to Source leakage current Gate to Source cut-off voltage Mutual conductance Symbol IDSS IGSS VGSC gm * Conditions VDS = 10 V, VGS = 0 VGS = −30 V, VDS = 0 VDS = 10 V, ID = 10 µA VDS = 10 V, ID = 0.
5 mA, f = 1 kHz VDS = 10 V, VGS = 0, f = 1 kHz VDS = 10 V, VGS = 0, f = 1 MHz VDS = 30 V, ID = 1 mA, GV = 80 dB Rg = 100 kΩ, Function = FLAT min 0.
5 − 0.
1 4 typ max 12 −100 −1.
5 Unit mA nA V mS pF pF mV 13 14 3.
5 60 Input capacitance (Common Source) Ciss Reverse transfer capacitance (Common Source) Crss Noise figure NV * IDSS rank classification Runk IDSS (mA) P 0.
5 to 3 1OP Q 2 to 6 1OQ R 4 to 12 1OR Marking Symbol Note) The part number in the parenthesis shows conventional part number.
Publication date: January 2002 SJF00006BED 0.
4±0.
2 5˚ 1 2SK0198 PD  T a 240 8 Ta = 25°C 7 200 8.
0 6 VGS = 0 V 5 4 3 2 1 0 0 20 40 60 80 100 120 140 160 0 0 2 4 6 8 10 12 − 0.
2 V − 0.
3 V − 0.
4 V 0 −1.
0 − 0.
8 − 0.
6 ID  VDS 9.
6 ID  VGS VDS = 10 V Allowable power dissipation PD (mW) Drain current ID (mA) 160 Drain current ID (mA) 6.
4 120 ...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)