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2SD1460

Part Number	2SD1460
Manufacturer	Toshiba
Description	Silicon NPN Transistor
Published	Feb 28, 2006
Detailed Description	:) SILICON NPN TRIPLE DIFFUSED TYPE (DARLINGTON POWER) HIGH CURRENT SWITCHING APPLICATIONS. FEATURES . High Collector C...
Datasheet	2SD1460 PDF File

Overview

:) SILICON NPN TRIPLE DIFFUSED TYPE (DARLINGTON POWER) HIGH CURRENT SWITCHING APPLICATIONS.
FEATURES .
High Collector Current : Ic=30A .
High DC Current Gain : hFE=1000(Min.
(V C e=5V, Ic=20A) .
Monolithic Construction with Built-in Base-Emitter Shunt Resistor.
Unit in mm 025.
OMAX.
MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage SYMBOL v CBO VCEO RATING 100 100 UNIT V Emitter-Base Voltage VEBO Collector Current ic 30 Base Current Collector Power Dissipation (Tc=25°C) Junction Temperature Storage Temperature Range EQUIVALENT CIRCUIT IB PC L stg 200 150 -65-150 COLLECTOR 1.
BASE 2.
EMITTER COLLECTOR (CASE) TO-3 TOSHIBA TC-3 , TB-3 2-2...

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