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MRF15090

Motorola
Part Number MRF15090
Manufacturer Motorola
Description RF POWER TRANSISTOR
Published Apr 19, 2006
Detailed Description ( DataSheet : www.DataSheet4U.com ) MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF15090/D The RF L...
Datasheet PDF File MRF15090 PDF File

MRF15090
MRF15090

Overview
( DataSheet : www.
DataSheet4U.
com ) MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF15090/D The RF Line NPN Silicon RF Power Transistor Designed for 26 volts microwave large–signal, common emitter, class A and class AB linear amplifier applications in industrial and commercial FM/AM equipment operating in the range 1400–1600 MHz.
• Specified 26 Volts, 1490 MHz, Class AB Characteristics Output Power — 90 Watts (PEP) Gain — 7.
5 dB Min @ 90 Watts (PEP) Collector Efficiency — 30% Min @ 90 Watts (PEP) Intermodulation Distortion — –28 dBc Max @ 90 Watts (PEP) MRF15090 90 W, 1.
5 GHz RF POWER TRANSISTOR NPN SILICON ARCHIVE INFORMATION • Characterized with Series Equivalent Large–Signal Parameters from 1400–1600 MHz • Characterized with Small–Signal S–Parameters from 1000–2000 MHz • Silicon Nitride Passivated • 100% Tested for Load Mismatch Stress at All Phase Angles with 3:1 Load VSWR @ 28 Vdc, and Rated Output Power • Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration • Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ.
CASE 375A–01, STYLE 1 MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Emitter Voltage Emitter–Base Voltage Collector–Current — Continuous @ TJ(max) = 150°C Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Symbol VCEO VCES VEBO IC PD Tstg Value 25 60 4 15 250 1.
43 – 65 to +150 Unit Vdc Vdc Vdc Adc Watts W/°C °C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol RθJC Symbol Min Typ Max 0.
70 Unit °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.
) Characteristic Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = 50 mAdc, IB = 0) Collector–Emitter Breakdown Voltage (IC = 50 mAdc, VBE = 0) Collector–Emitter Breakdown Voltage (IC = 50 mAdc, RBE = 100 Ω) V(BR)CEO V(BR)CES V(BR)CER 25 60 30 28 65 — — — — Vdc Vdc Vdc (continued) www.
DataSheet4U.
co...


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