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K2225

Part Number	K2225
Manufacturer	Hitachi Semiconductor
Description	2SK2225
Published	Jun 11, 2006
Detailed Description	2SK2225 Silicon N-Channel MOS FET Application High speed power switching Features • High breakdown voltage (VDSS = 1500...
Datasheet	K2225 PDF File

Overview

2SK2225 Silicon N-Channel MOS FET Application High speed power switching Features • High breakdown voltage (VDSS = 1500 V) • High speed switching • Low drive current • No Secondary Breakdown • Suitable for Switching regulator, DC-DC converter Outline TO-3PFM ADE-208-140 1st.
Edition D G 1 2 3 1.
Gate 2.
Drain 3.
Source S 2SK2225 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1.
PW ≤ 10 µs, duty cycle ≤ 1 % 2.
Value at Tc = 25 °C Symbol VDSS VGSS ID I *1 D(pulse) I DR Pch*2 Tch Tstg Ratings Unit ...

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