DatasheetsPDF.com

2SB772

NEC
Part Number 2SB772
Manufacturer NEC
Description PNP SILICON POWER TRANSISTOR
Published Jul 8, 2006
Detailed Description www.DataSheet4U.com DATA SHEET PNP SILICON POWER TRANSISTOR 2SB772 PNP SILICON POWER TRANSISTOR DESCRIPTION The 2SB...
Datasheet PDF File 2SB772 PDF File

2SB772
2SB772

Overview
www.
DataSheet4U.
com DATA SHEET PNP SILICON POWER TRANSISTOR 2SB772 PNP SILICON POWER TRANSISTOR DESCRIPTION The 2SB772 is PNP silicon transistor suited for the output stage of 3 W audio amplifier, voltage regulator, DC-DC converter and relay driver.
PACKAGE DRAWING (Unit: mm) 8.
5 MAX.
3.
2 ±0.
2 3.
8 ±0.
2 2.
8 MAX.
FEATURES • Low saturation voltage VCE(sat) ≤ −0.
5 V (IC = −2 A, IB = −0.
2 A) • Excellent hFE linearity and high hFE hFE = 60 to 400 (VCE = −2 V, IC = −1 A) • Less cramping space required due to small and thin package and reducing the trouble for attachment to a radiator.
No insulator bushing required.
12.
0 MAX.
2.
5 ±0.
2 13.
0 MIN.
ABSOLUTE MAXIMUM RATINGS Maximum Temperature Storage Temperature −55 to +150°C Junction Temperature 150°C Maximum Maximum Power Dissipation 1.
0 W Total Power Dissipation (TA = 25°C) 10 W Total Power Dissipation (TC = 25°C) Maximum Voltages and Currents (TA = 25°C) Collector to Base Voltage −40 V VCBO Collector to Emitter Voltage −30 V VCEO Emitter to Base Voltage −5.
0 V VEBO Collector Current (DC) −3.
0 A IC(DC) IC(pulse)Note Collector Current (pulse) −7.
0 A Note Pulse Test PW ≤ 350 µs, Duty Cycle ≤ 2% 12 TYP.
0.
55 +0.
08 –0.
05 0.
8 +0.
08 –0.
05 1.
2 TYP.
2.
3 TYP.
2.
3 TYP.
1: Emitter 2: Collector: connected to mounting plane 3: Base ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTIC DC Current Gain DC Current Gain Gain Bandwidth Product Output Capacitance Collector Cutoff Current SYMBOL hFE1 hFE2 fT Cob ICBO IEBO VCE(sat) VBE(sat) TEST CONDITIONS VCE = −2.
0 V, IC = −20 mA VCE = −5.
0 V, IC = −0.
1 A VCB = −10 V, IE = 0, f = 1.
0 MHz VCB = −30 V, IE = 0 A VEB = −3.
0 V, IC = 0 A IC = −2.
0 A, IB = −0.
2 A IC = −2.
0 A, IB = −0.
2 A Note Note Note Note MIN.
30 60 TYP.
220 160 80 55 MAX.
400 UNIT VCE = −2.
0 V, IC = −1.
0 mA MHz pF −1.
0 −1.
0 ww.
DataSheet4U.
com Emitter Cutoff Current Collector Saturation Voltage Base Saturation Voltage µA µA V V −0.
3 −1.
0 −0.
5 −2.
0 Note Pulse Test: PW ≤ 350 µs, Duty Cycle ≤ 2% CLASSIFICAT...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)