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2N3906

Part Number	2N3906
Manufacturer	Motorola
Description	Transistors
Published	Jul 12, 2006
Detailed Description	MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N3905/D General Purpose Transistors PNP Silicon COLLECT...
Datasheet	2N3906 PDF File

Overview

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N3905/D General Purpose Transistors PNP Silicon COLLECTOR 3 2 BASE 1 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C VCEO VCBO VEBO IC PD 40 Vdc 40 Vdc 5.
0 Vdc 200 mAdc 625 mW 5.
0 mW/°C Total Power Dissipation @ TA = 60°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD PD 250 mW 1.
5 Watts 12 mW/°C Operating and Storage Junction Temperature Range TJ, Tstg – 55 to +150 °C THERMAL CHARACTERISTICS(1) Characteristic Symbol Max Unit Thermal Re...

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