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B1375

Toshiba Semiconductor
Part Number B1375
Manufacturer Toshiba Semiconductor
Description 2SB1375
Published Sep 26, 2006
Detailed Description TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SB1375 Audio Frequency Power Amplifier 2SB1375 Unit: mm • Low sat...
Datasheet PDF File B1375 PDF File

B1375
B1375

Overview
TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SB1375 Audio Frequency Power Amplifier 2SB1375 Unit: mm • Low saturation voltage: VCE (sat) = −1.
5 V (max) (IC = −2 A, IB = −0.
2 A) • High power dissipation: PC = 25 W (Tc = 25°C) • Collector metal (fin) is covered with mold resin • Complementary to 2SD2012 Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Ta = 25°C Tc = 25°C Junction temperature Storage temperature range VCBO VCEO VEBO IC IB PC Tj Tstg −60 −60 −7 −3 −0.
5 2.
0 25 150 −55 to 150 V V V A A W °C °C JEDEC ― ...


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