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IRFZ24NS

International Rectifier
Part Number IRFZ24NS
Manufacturer International Rectifier
Description Power MOSFET
Published Oct 17, 2006
Detailed Description com PD - 9.1355B IRFZ24NS/L HEXFET® Power MOSFET l l l l l l Advanced Process Technology Surface Moun...
Datasheet PDF File IRFZ24NS PDF File

IRFZ24NS
IRFZ24NS


Overview
com PD - 9.
1355B IRFZ24NS/L HEXFET® Power MOSFET l l l l l l Advanced Process Technology Surface Mount (IRFZ24NS) Low-profile through-hole (IRFZ24NL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS(on) = 0.
07Ω G ID = 17A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
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