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BD651

Bourns Electronic Solutions
Part Number BD651
Manufacturer Bourns Electronic Solutions
Description NPN SILICON POWER DARLINGTONS
Published Oct 31, 2006
Detailed Description www.DataSheet4U.com BD645, BD647, BD649, BD651 NPN SILICON POWER DARLINGTONS ● ● ● ● Designed for Complementary Use w...
Datasheet PDF File BD651 PDF File

BD651
BD651

Overview
www.
DataSheet4U.
com BD645, BD647, BD649, BD651 NPN SILICON POWER DARLINGTONS ● ● ● ● Designed for Complementary Use with BD646, BD648, BD650 and BD652 62.
5 W at 25°C Case Temperature 8 A Continuous Collector Current Minimum hFE of 750 at 3V, 3 A B C E TO-220 PACKAGE (TOP VIEW) 1 2 3 Pin 2 is in electrical contact with the mounting base.
MDTRACA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING BD645 Collector-base voltage (IE = 0) BD647 BD649 BD651 BD645 Collector-emitter voltage (IB = 0) BD647 BD649 BD651 Emitter-base voltage Continuous collector current Peak collector current (see Note 1) Continuous base current Continuous device dissipation at (or below) 25°C case temperature (see Note 2) Continuous device dissipation at (or below) 25°C free air temperature (see Note 3) Unclamped inductive load energy (see Note 4) Operating junction temperature range Storage temperature range Lead temperature 3.
2 mm from case for 10 seconds NOTES: 1.
2.
3.
4.
VEBO IC ICM IB Ptot Ptot ½LIC2 Tj Tstg TL VCEO V CBO SYMBOL VALUE 80 100 120 140 60 80 100 120 5 8 12 0.
3 62.
5 2 50 -65 to +150 -65 to +150 260 V A A A W W mJ °C °C °C V V UNIT This value applies for tp ≤ 0.
3 ms, duty cycle ≤ 10%.
Derate linearly to 150°C case temperature at the rate of 0.
4 W/°C.
Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = 5 mA, RBE = 100 Ω, VBE(off) = 0, RS = 0.
1 Ω, VCC = 20 V.
PRODUCT DataSheet 4 U .
com INFORMATION 1 MAY 1993 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice.
www.
DataSheet4U.
com BD645, BD647, BD649, BD651 NPN SILICON POWER DARLINGTONS electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER Collector-emitter breakdown voltage TEST CONDITIONS BD645 V(BR)CEO IC = 30 mA IB = 0 (see Note 5) BD647 BD649 BD651 VCE = 30 V ICEO Collector-emitter cut-off current...


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