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SS3P4

Vishay Siliconix
Part Number SS3P4
Manufacturer Vishay Siliconix
Description High-Current Density Surface Mount Schottky Rectifier
Published Nov 15, 2006
Detailed Description www.DataSheet4U.com SS3P4 New Product Vishay General Semiconductor High-Current Density Surface Mount Schottky Rectif...
Datasheet PDF File SS3P4 PDF File

SS3P4
SS3P4

Overview
www.
DataSheet4U.
com SS3P4 New Product Vishay General Semiconductor High-Current Density Surface Mount Schottky Rectifier FEATURES • Very low profile - typical height of 1.
0 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency • Low thermal resistance • Meets MSL level 1, per J-STD-020C, LF max peak of 260 °C • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL APPLICATIONS For use in low voltage high frequency inverters, freewheeling, dc-to-dc converters and polarity protection applications.
MECHANICAL DATA Case: DO-220AA (SMP) Epoxy meets UL 94V-0 flammability rating Terminals: Matte tin plated leads, solderable per J-STD-002B and JESD22-B102D E3 suffix for commercial grade, HE3 suffix for high reliability grade (AEC Q101 qualified) Polarity: Color band denotes the cathode end DO-220AA (SMP) MAJOR RATINGS AND CHARACTERISTICS IF(AV) VRRM IFSM EAS VF Tj max.
3A 40 V 50 A 11.
25 mJ 0.
50 V 150 °C MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Device marking code Maximum repetitive peak reverse voltage Maximum average forward rectified current (see Fig.
1) Peak forward surge current 8.
3 ms single half sine-wave superimposed on rated load Non-repetitive avalanche energy at Tj = 25 °C, IAS = 1.
5 A, L = 10 mH Voltage rate of change (rated VR) Operating junction and storage temperature range VRRM IF(AV) IFSM EAS dv/dt TJ, TSTG SYMBOL SS3P4 34 40 3.
0 50 11.
25 10000 - 55 to + 150 V A A mJ V/µs °C UNIT ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Maximum instantaneous forward voltage (1) Maximum reverse current at rated VR (1) Typical junction capacitance Note: (1) Thermal resistance from junction to ambient and junction to lead mounted on P.
C.
B.
with 15 x 15 mm copper pad areas RθJL is measured at the terminal of cathode band RθJC is measured at the top centre of the body Document Number 88954 26-Jun-06 www.
vishay.
com 1 TEST CONDITIONS at IF = 3 A, at IF = 3 A, Tj...


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