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SS10PH9

Vishay Siliconix
Part Number SS10PH9
Manufacturer Vishay Siliconix
Description (SS10PH9 / SS10PH10) High Current Density Surface Mount High-Voltage Schottky Rectifier
Published Feb 1, 2007
Detailed Description www.DataSheet4U.com SS10PH9 & SS10PH10 Preliminary Vishay General Semiconductor High Current Density Surface Mount Hi...
Datasheet PDF File SS10PH9 PDF File

SS10PH9
SS10PH9

Overview
www.
DataSheet4U.
com SS10PH9 & SS10PH10 Preliminary Vishay General Semiconductor High Current Density Surface Mount High-Voltage Schottky Rectifier FEATURES • Very low profile - typical height of 1.
1 mm K • Ideal for automated placement • Guardring for overvoltage protection 1 2 TO-277A (SMPC) K Cathode Anode 1 Anode 2 • High Barrier Technology, Tj = 175 °C Maximum • Low leakage current • Meets MSL level 1, per J-STD-020C • Solder Dip 260 °C, 40 seconds • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL APPLICATIONS For use in high frequency rectifier of switching mode power supplies, free-wheeling diodes, dc-to-dc converters or polarity protection application.
MECHANICAL DATA Case: TO-277A (SMPC) Epoxy meets UL 94V-0 flammability rating Terminals: Matte tin plated leads, solderable per J-STD-002B and JESD22-B102D E3 suffix for commercial grade Polarity: As marked MAJOR RATINGS AND CHARACTERISTICS IF(AV) VRRM IFSM EAS VF at IF = 10 A IR Tj max.
10 A 90 V, 100 V 200 A 20 mJ 0.
661 V 0.
3 µA 175 °C MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Device marking code Maximum repetitive peak reverse voltage Maximum average forward rectified current (see Fig.
1) Peak forward surge current 10 ms single half sine-wave superimposed on rated load Non-repetitive avalanche energy at IAS = 2 A, L = 10 mH, Tj = 25 °C Voltage rate of change (rated VR) Operating junction and storage temperature range VRRM IF(AV) IFSM EAS dv/dt TJ, TSTG SYMBOL SS10PH9 10H9 90 10 200 20 10000 - 55 to + 175 SS10PH10 10H10 100 V A A mJ V/µs °C UNIT Document Number 89000 24-Jul-06 www.
vishay.
com 1 SS10PH9 & SS10PH10 Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS at IF = 5 A at IF = 10 A at IF = 5 A at IF = 10 A Reverse current (1) Typical junction capacitance Note: (1) Pulse test: 300 µs pulse width, 1 % duty cycle at rated VR at 4.
0 V, 1 MHz Tj = 25 °C VF Tj = 125 °C Tj = 25 °C Tj = 125 °C ...


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