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2SK2595

Part Number	2SK2595
Manufacturer	Hitachi Semiconductor
Description	Silicon N-Channel MOSFET
Published	Feb 14, 2007
Detailed Description	com 2SK2595 Silicon N-Channel MOS FET UHF Power Amplifier 1st. Edition Features • High power output, H...
Datasheet	2SK2595 PDF File

Overview

com 2SK2595 Silicon N-Channel MOS FET UHF Power Amplifier 1st.
Edition Features • High power output, High gain, High efficiency PG = 7.
8dB, Pout = 37.
3dBm, ηD = 50 %min.
(f = 836.
5MHz) • Compact package capable of surface mounting Outline This Device is sensitive to Elector Static Discharge.
An Adequate handling procedure is requested.
2SK2595 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Channel dissipation Channel temperature Storage temperature Notes: 1.
PW ≤ 10 µs, duty cycle ≤ 1 % 2.
Value at Tc = 25°C Symbol VDSS VGSS ID I D(pulse)* Pch* Tch Tstg 2 1 Ratings 17 ±10 1.
1 5 20 150 –45 to +150...

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