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C1226

IMP
Part Number C1226
Manufacturer IMP
Description CMOS
Published Feb 26, 2007
Detailed Description www.DataSheet4U.com ® ISO 9001 Registered Process C1226 CMOS 1.2µ m 100V CMOS, Double Metal - Double Poly Electrical C...
Datasheet PDF File C1226 PDF File

C1226
C1226

Overview
www.
DataSheet4U.
com ® ISO 9001 Registered Process C1226 CMOS 1.
2µ m 100V CMOS, Double Metal - Double Poly Electrical Characteristics T = 25oC Unless otherwise noted Symbol N-Channel High Voltage Transistor Threshold Voltage HVTN Punch Through Voltage HVBVDSSN ON Resistance HVPR0N Operating Voltage N-Channel Low Voltage Transistor Threshold Voltage VTN Body Factor γN Conduction Factor βN Effective Channel Length LeffN Width Encroachment ∆WN Punch Through Voltage BVDSSN Poly Field Threshold Voltage VTFPN Symbol P-Channel High Voltage Transistor Threshold Voltage HVTP Punch Through Voltage HVBVDSSP ON Resistance HVPR0N Operating Voltage P-Channel Low Voltage Transistor Threshold Voltage VTP Body Factor γP Conduction Factor βP Effective Channel Length LeffP Width Encroachment ∆WP BVDSSP Punch Through Voltage Poly Field Threshold Voltage VTFP(P) Minimum 0.
70 120 550 Typical 0.
90 700 VGS = 5V VDS = 100V 0.
45 0.
475 78 1.
35 0.
4 12 15 Typical –0.
90 2500 VGS = 5V VDS = 100V –0.
45 0.
6 25 1.
5 0.
4 –12 –12 Maximum 1.
10 850 Unit V V Ω Comments W/L = 147/5 0.
30 64 0.
65 92 5 8 Minimum –0.
70 –120 2000 V V1/2 µA/V 2 µm µm V V Unit V V Ω V 100x1.
5µm 100x1.
5µm 100x100µm 100x1.
5µm Per side Maximum –1.
10 3000 Comments W/L = 139/5 -0.
65 20 –0.
30 30 –5 –8 V V1/2 µA/V 2 µm µm V V 100x1.
5µm 100x1.
5µm 100x100µm 100x1.
5µm Per side © 2001 IMP, Inc.
69 Process C1226 Physical Characteristics Diffusion & Thin Films Symbol Starting Material p<100> Well (field) Sheet Resistance ρN-well(f) ρN+ N+ Sheet Resistance N+ Junction Depth xjN+ ρP+ P+ Sheet Resistance P+ Junction Depth xjP+ High-Voltage Gate Oxide Th HTGOX Gate Oxide Thickness TGOX Interpoly Oxide IPOX ρPOLY1 Gate Poly Sheet Resistance ρM1 Metal-1 Sheet Resistance ρ Metal-2 Sheet Resistance M2 Passivation Thickness TPASS High Voltage Section Rules Min Channel Width Min Spacing, Active Region, 5V Poly1 Width/Space Poly2 Width/Space Contact Width/Space Via Width/Space Metal-1 Width/Space Metal-2 Width/Space Minimum 1.
0 2...


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