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75N75

UTC
Part Number 75N75
Manufacturer UTC
Description N-CHANNEL POWER MOSFET
Published Mar 19, 2007
Detailed Description UNISONIC TECHNOLOGIES CO., LTD 75N75 80A, 75V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 75N75 is n-channel enhanceme...
Datasheet PDF File 75N75 PDF File

75N75
75N75


Overview
UNISONIC TECHNOLOGIES CO.
, LTD 75N75 80A, 75V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 75N75 is n-channel enhancement mode power field effect transistors with stable off-state characteristics, fast switching speed, low thermal resistance, usually used at telecom and computer application.
Power MOSFET 1 TO-220 1 TO-220F 1 TO-263  FEATURES * RDS(ON) ≤ 11 mΩ @ VGS=10V, ID=40A * Fast switching capability * Avalanche energy Specified * Improved dv/dt capability, high ruggedness 1 TO-220F1 1 TO-220F2  SYMBOL  ORDERING INFORMATION Ordering Number Lead Free Halogen Free 75N75L-TA3-T 75N75G-TA3-T 75N75L-TF1-T 75N75G-TF1-T 75N75L-TF2-T 75N75G-TF2-T 75N75L-TF3-T 75N75G-TF3-T 75N75L-TQ2-T 75N75G-TQ2-T 75N75L-TQ2-R 75N75G-TQ2-R Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220 TO-220F1 TO-220F2 TO-220F TO-263 TO-263 Pin Assignment 123 GDS GDS GDS GDS GDS GDS Packing Tube Tube Tube Tube Tube Tape Reel www.
unisonic.
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tw Copyright © 2023 Unisonic Technologies Co.
, Ltd.
1 of 9 QW-R502-097.
I 75N75  MARKING Power MOSFET UNISONIC TECHNOLOGIES CO.
, LTD www.
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I 75N75 Power MOSFET  ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 2) TC = 25°C Single Pulsed Avalanche Energy (Note 3) Peak Diode Recovery dv/dt (Note 4) VDSS VGSS ID IDM EAS dv/dt 75 V ±20 V 80 A 160 A 525 mJ 4.
8 V/ns Power Dissipation TO-220/TO-263 TO-220F/ TO-220F1 PD TO-220F2 200 W 48 W Junction Temperature TJ +175 °C Storage Temperature TSTG -55 ~ +175 °C Notes: 1.
Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2.
Repetitive Rating : Pulse width limited by maximum junction temperature.
3.
L = 0.
1 mH, IAS = 102A, VDD = 50V, RG = 25 Ω, Starting TJ...



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