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DTA114T

UTC
Part Number DTA114T
Manufacturer UTC
Description DIGITAL TRANSISTORS
Published Apr 13, 2007
Detailed Description UNISONIC TECHNOLOGIES CO., LTD DTA114T DIGITAL TRANSISTORS (BUILT- IN BIAS RESISTORS) „ FEATURES PNP SILICON TRANSISTOR...
Datasheet PDF File DTA114T PDF File

DTA114T
DTA114T

Overview
UNISONIC TECHNOLOGIES CO.
, LTD DTA114T DIGITAL TRANSISTORS (BUILT- IN BIAS RESISTORS) „ FEATURES PNP SILICON TRANSISTOR * Built-in bias resistors that implies easy ON/OFF applications.
* The bias resistors are thin-film resistors with complete isolation to allow positive input.
„ EQUIVALENT CIRCUIT *Pb-free plating product number:DTA114TL „ ORDERING INFORMATION Order Number Normal Lead Free Plating DTA114T-AE3-R DTA114TL-AE3-R DTA114T-AL3-R DTA114TL-AL3-R DTA114T-AN3-R DTA114TL-AN3-R www.
DataSheet4U.
com Package SOT-23 SOT-323 SOT-523 Pin Assignment 1 2 3 E B C E B C E B C Packing Tape Reel Tape Reel Tape Reel DTA114TL-AE3-R (1)Packing Type (2)Package Type (3)Lead Plating (1) R: Tape Reel (2) AE3: SOT-23, AL3: SOT-323, AN3: SOT-523 (3) L: Lead Free Plating, Blank: Pb/Sn „ MARKING ofwww.
unisonic.
com.
tw Copyright © 2005 Unisonic Technologies Co.
, Ltd 1of 3 QW-R206-061,B DTA114T „ ABSOLUTE MAXIMUM RATINGS (Ta = 25℃) SYMBOL VCBO VCEO VEBO IC PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current PNP SILICON TRANSISTOR RATING UNIT -50 V -50 V -5 V -100 mA SOT-23 200 mW Collector Power Dissipation PC SOT-323/SOT-523 150 mW ℃ Junction Temperature TJ +150 ℃ Storage Temperature TSTG -55~+150 Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
„ ELECTRICAL CHARACTERISTICS (Ta= 25℃, unless otherwise specified) SYMBOL BVCBO BVCEO BVEBO VCE(SAT) ICBO IEBO hFE R1 fT TEST CONDITIONS IC=-50μA IC=-1mA IE=-50μA IC=-10mA, IB=-1mA VCB=-50V VEB=-4V VCE=-5V, IC=-1mA VCE=-10V, IE=5mA, f=100MHz* MIN -50 -50 -5 TYP MAX UNIT V V V -0.
3 V -0.
5 μA -0.
5 μA 600 13 kΩ MHz PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain Input Resis...


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