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DTA115E

UTC
Part Number DTA115E
Manufacturer UTC
Description PNP DIGITAL TRANSISTOR
Published Apr 13, 2007
Detailed Description UNISONIC TECHNOLOGIES CO., LTD DTA115E PNP EPITAXIAL SILICON TRANSISTOR PNP DIGITAL TRANSISTOR (BUILT-IN RESISTORS) ...
Datasheet PDF File DTA115E PDF File

DTA115E
DTA115E

Overview
UNISONIC TECHNOLOGIES CO.
, LTD DTA115E PNP EPITAXIAL SILICON TRANSISTOR PNP DIGITAL TRANSISTOR (BUILT-IN RESISTORS)  FEATURES * Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see the equivalent circuit).
* The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input They also have the advantage of almost completely eliminating parasitic effects.
* Only the on / off conditions need to be set for operation, making device design easy.
 EQUIVALENT CIRCUIT R1 IN R2 IN OUT GND (+) OUT GND (+)  ORDERING INFORMATION Ordering Number DTA115EG-AE3-R DTA115EG-AL3-R Note: Pin Assignment: G: GND I: IN O: OUT Package SOT-23 SOT-323 Pin Assignment 123 GIO GIO Packing Tape Reel Tape Reel  MARKING www.
unisonic.
com.
tw Copyright © 2015 Unisonic Technologies Co.
, Ltd 1 of 3 QW-R220-016.
C DTA115E PNP EPITAXIAL SILICON TRANSISTOR  ABSOLUATE MAXIUM RATINGS (TA= 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Supply Voltage Input Voltage VCC -50 V VIN -40~+10 V Output Current IOUT IC(MAX) -20 -100 mA Power Dissipation Junction Temperature PD 200 mW TJ 150 °C Storage Temperature TSTG -40 ~ +150 °C Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
 ELECTRICAL CHARACTERISTICS (TA= 25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS Input Voltage Output Voltage VIN(OFF) VIN(ON) VOUT(ON) VCC= -5V, IOUT=-100μA VOUT= -0.
3V,IOUT= -1mA IOUT= -5mA, IIN= -0.
25mA Input Current Output Current IIN VIN= -5V IOUT(OFF) VCC= -50V , VIN=0V DC Current Gain Input Resistance GI VOUT= -5V,IOUT= -5mA R1 Resistance Ratio Transition Frequency R2/R1 fT VCE= -10 V, IE= 5mA, f=100MHz (Note) Note: Transition frequency of the device MIN TYP MAX UNIT -3 -0.
5 V -0.
1 -0.
...


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