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DTC124E

UTC
Part Number DTC124E
Manufacturer UTC
Description NPN DIGITAL TRANSISTOR
Published Apr 14, 2007
Detailed Description UNISONIC TECHNOLOGIES CO., DTC124E NPN DIGITAL TRANSISTOR (BUILT-IN RESISTORS) FEATURES NPN EPITAXIAL SILICON TRANSIST...
Datasheet PDF File DTC124E PDF File

DTC124E
DTC124E

Overview
UNISONIC TECHNOLOGIES CO.
, DTC124E NPN DIGITAL TRANSISTOR (BUILT-IN RESISTORS) FEATURES NPN EPITAXIAL SILICON TRANSISTOR *Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see the equivalent circuit).
*The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input They also have the advantage of almost completely eliminating parasitic effects.
*Only the on / off conditions need to be set for operation, making device design easy.
2 1 3 EQUIVALENT CIRCUIT R1 IN R2 GND IN GND OUT OUT MARKING SOT-23 *Pb-free plating product number:DTC124EL CC4 PIN CONFIGURATION PIN NO.
PIN NAME 1 GND 2 IN 3 OUT www.
DataSheet4U.
com ORDERING INFORMATION Order Number Normal Lead free DTC124E-AE3-R DTC124EL-AE3-R Package SOT-23 Packing Tape Reel www.
unisonic.
com.
tw Copyright © 2005 Unisonic Technologies Co.
, 1 QW-R206-045,B DTC124E PARAMETER Supply Voltage Input Voltage Output Current Power Dissipation Junction Temperature Storage Temperature SYMBOL VCC VIN IC IO PD TJ TSTG NPN EPITAXIAL SILICON TRANSISTOR ABSOLUATE MAXIUM RATINGS (Ta = 25℃) RATINGS 50 -10 ~ +40 100 30 200 150 -40 ~ +150 UNIT V V mA mW ℃ ℃ ELECTRICAL CHARACTERISTICS (Ta= 25℃, unless otherwise specified.
) SYMBOL VI(off) Input Voltage VI(ON) Output Voltage VO(ON) Input Current II Output Current IO(off) DC Current Gain GI Input Resistance R1 Resistance Ratio R2/R1 Transition Frequency fT *Transition frequency of the device PARAMETER TEST CONDITIONS VCC= 5V, IOUT=100μA VOUT= 0.
2V, IOUT= 5mA IOUT/IIN= 10mA / 0.
5 mA VIN= 5V VCC= 50V , VIN=0V VOUT= 5V, IOUT= 5mA MIN 3 0.
1 0.
3 0.
36 0.
5 28.
6 1.
2 TYP MAX 0.
5 UNIT V V mA μA kΩ MHz 56 15.
4 0.
8 VCE= 10 V, IE= -5mA, f=100MHz * 22 1 250 UNISONIC TECHNOLOGIES CO.
, LTD www.
unisonic.
com.
tw 2 QW-R206-045,B DTC124E ■ NPN EPITAXIAL SILICON TRANSISTOR TYPICAL CHARACTERICS Fig.
1 Input voltage vs.
output current (ON characterristics) Vo=-0.
2V Fig.
2 Output c...


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