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TIP112

Part Number	TIP112
Manufacturer	UTC
Description	NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR
Published	Apr 15, 2007
Detailed Description	UTC TIP112 NPN EPITAXIAL PLANAR TRANSISTOR NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR FEATURES * High DC Current Gain...
Datasheet	TIP112 PDF File

Overview

UTC TIP112 NPN EPITAXIAL PLANAR TRANSISTOR NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR FEATURES * High DC Current Gain : hFE = 1000 @VCE=4V, Ic=1A (Min) * Low Collector-Emitter Saturation Voltage * Industrial Use EQUIVALENT TEST (R1≅10kΩ, R2≅0.
6Ω) B C E TO-220 ABSOLUTE MAXIMUM RATINGS (Ta=25°C) PARAMETER Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current (DC) Collector Dissipation (Ta=25°C) Collector Dissipation (Tc=25°C) Junction Temperature Storage Temperature SYMBOL VCBO www.
DataSheet4U.
com VCEO VEBO Ic Icp IB Pc Pc Tj TSTG VALUE 100 100 5 2 4 50 2 50 150 -65 ~ +150 UNIT V V V A A mA W W °...

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