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NJ32

Part Number	NJ32
Manufacturer	InterFET
Description	Silicon Junction Field-Effect Transistor General Purpose Amplifier
Published	May 11, 2007
Detailed Description	F-18 01/99 NJ32 Process Silicon Junction Field-Effect Transistor ¥ General Purpose Amplifier Absolute maximum ratings...
Datasheet	NJ32 PDF File

Overview

F-18 01/99 NJ32 Process Silicon Junction Field-Effect Transistor ¥ General Purpose Amplifier Absolute maximum ratings at TA = 25¡C Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts 10 mA +150°C – 65°C to +175°C G S-D S-D G Die Size = 0.
018" X 0.
018" All Bond Pads = 0.
004" Sq.
Substrate is also Gate.
Devices in this Databook based on the NJ32 Process.
Datasheet 2N3821, 2N3822 2N3823, 2N3824 2N4222, 2N4222A www.
DataSheet4U.
com At 25°C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Reverse Gate Leakage Current Drain Saturation Current (Pulsed) Gate Source Cutoff Voltage Dynamic Electrical Characteristics Forward Transconduc...

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