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NJ42

Part Number	NJ42
Manufacturer	INTERFET
Description	Silicon Junction Field-Effect Transistor
Published	May 11, 2007
Detailed Description	F-24 01/99 NJ42 Process Silicon Junction Field-Effect Transistor ¥ General Purpose Amplifier ¥ High Breakdown Voltage...
Datasheet	NJ42 PDF File

Overview

F-24 01/99 NJ42 Process Silicon Junction Field-Effect Transistor ¥ General Purpose Amplifier ¥ High Breakdown Voltage Absolute maximum ratings at TA = 25¡C Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts 10 mA +150°C – 65°C to +175°C S D S Die Size = 0.
032" X 0.
032" All Bond Pads = 0.
004", Dia.
Substrate is also Gate.
Devices in this Databook based on the NJ42 Process.
Datasheet 2N6449, 2N6450 IFN6449, IFN6450 www.
DataSheet4U.
com At 25°C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Reverse Gate Leakage Current Drain Saturation Current (Pulsed) Gate Source Cutoff Voltage Dynamic Electrical Characteristics Forward Tran...

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