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PJ32

Part Number	PJ32
Manufacturer	InterFET
Description	Silicon Junction Field-Effect Transistor General Purpose Amplifier
Published	May 11, 2007
Detailed Description	F-20 01/99 PJ32 Process Silicon Junction Field-Effect Transistor ¥ General Purpose Amplifier Absolute maximum ratings...
Datasheet	PJ32 PDF File

Overview

F-20 01/99 PJ32 Process Silicon Junction Field-Effect Transistor ¥ General Purpose Amplifier Absolute maximum ratings at TA = 25¡C Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts 10 mA +150°C – 65°C to +175°C G S-D S-D G Die Size = 0.
018" X 0.
018" All Bond Pads = 0.
004" Sq.
Substrate is also Gate.
Devices in this Databook based on the PJ32 Process.
Datasheet 2N5020, 2N5021 2N5460, 2N5461 2N5462 www.
DataSheet4U.
com At 25°C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Reverse Gate Leakage Current Drain Saturation Current (Pulsed) Gate Source Cutoff Voltage Dynamic Electrical Characteristics Forward Transconductance Inp...

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