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2N718A

Microsemi Corporation
Part Number 2N718A
Manufacturer Microsemi Corporation
Description NPN LOW POWER SILICON TRANSISTOR
Published May 16, 2007
Detailed Description TECHNICAL DATA NPN LOW POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/181 Devices 2N718A 2N1613 2N1613L Qualified ...
Datasheet PDF File 2N718A PDF File

2N718A
2N718A

Overview
TECHNICAL DATA NPN LOW POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/181 Devices 2N718A 2N1613 2N1613L Qualified Level JAN JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation @ TA = +250C (1) Symbol VCEO VCBO VEBO IC Value 30 75 7.
0 500 0.
5 0.
8 1.
8 3.
0 -55 to +175 Max.
Unit Vdc Vdc Vdc mAdc TO-18 (TO-206AA)* 2N718A 2N718A 2N1613, L @ TC = +250C (2) 2N718A 2N1613, L Operating & Storage Junction Temperature Range PT W TJ, Tstg Symbol 0 C THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case Unit 0 2N718A 97 C/W RθJC 2N1613, L 58 1) Derate linearly 4.
57 mW/0C for 2N1613, L and 2.
85 mW/0C for 2N718A for TA > +250C 2) Derate linearly 17.
2 mW/0C for 2N1613, L and 10.
3 mW/0C for 2N718A for TC > +250C TO-39 (TO-205AD)* 2N1613 TO-5* 2N1613L *See appendix A for package outline ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted) Characteristics Sy...


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