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XP1012

Mimix Broadband
Part Number XP1012
Manufacturer Mimix Broadband
Description GaAs MMIC Power Amplifier
Published May 25, 2007
Detailed Description 37.0-40.0 GHz GaAs MMIC Power Amplifier May 2006 - Rev 10-May-06 Velocium Products 18 - 20 GHz HPA - APH478 P1012 Chip...
Datasheet PDF File XP1012 PDF File

XP1012
XP1012

Overview
37.
0-40.
0 GHz GaAs MMIC Power Amplifier May 2006 - Rev 10-May-06 Velocium Products 18 - 20 GHz HPA - APH478 P1012 Chip Device Layout Features Excellent Linear Output Amplifier Stage 15.
0 dB Small Signal Gain +28.
0 dBm Output P1dB Compression Point +37.
0 dBm Third Order Intercept (OIP3) 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883 Method 2010 General Description Mimix Broadband’s two stage 37.
0-40.
0 GHz GaAs MMIC power amplifier is optimized for linear operation with a third order intercept point of +37.
0 dBm.
This MMIC uses Mimix Broadband’s 0.
15 µm GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity.
The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy www.
DataSheet4U.
com or eutectic solder die attach process.
This device is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications.
Absolute Maximum Ratings Supply Voltage (Vd) Supply Current (Id1,2) Gate Bias Voltage Input Power (Pin) Storage Temperature (Tstg) Operating Temperature (Ta) Channel Temperature (Tch) +5.
5 VDC 600,600 mA +0.
3 VDC +19 dBm -65 to +165 OC -55 to MTTF Table 3 MTTF Table 3 (3) Channel temperature affects a device's MTTF.
It is recommended to keep channel temperature as low as possible for maximum life.
Electrical Characteristics (Ambient Temperature T = 25 oC) Parameter Frequency Range (f ) Input Return Loss (S11) Output Return Loss (S22) Small Signal Gain (S21) Gain Flatness ( S21) Reverse Isolation (S12) Output Power for 1 dB Compression (P1dB) 2 Output Third Order Intercept Point (OIP3) 1,2 Drain Bias Voltage (Vd1,2) Gate Bias Voltage (Vg1,2) Supply Current (Id) (Vd=5.
0V, Vg=-0.
5V Typical) Units GHz dB dB dB dB dB dBm dBm VDC VDC mA Min.
37.
0 -1.
0 Typ.
10.
0 15.
0 15.
0 +/-0.
5 TBD +28.
0 +37.
0 +5.
0 -0.
5 1080 Max.
40.
0 0.
0 - (1) Measured at +18 dBm ...


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