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BZV62

Zetex Semiconductors
Part Number BZV62
Manufacturer Zetex Semiconductors
Description (BZV61 / BZV62) Silicon Power Zener Diode
Published Jun 27, 2007
Detailed Description BZV61 / BZV62 Silicon Power Zener Diode Part no. Description The BZV61/62 are hermetically sealed 35Aforward current dio...
Datasheet PDF File BZV62 PDF File

BZV62
BZV62

Overview
BZV61 / BZV62 Silicon Power Zener Diode Part no.
Description The BZV61/62 are hermetically sealed 35Aforward current diodes, which are available in different Zener voltages.
Features • • • • Applications • • Forward current 35A Zener voltages 22V, 27V, 33V or 39V Hermetic press-fit package Available in different modifications of the package Power supplies Rectifier diode in car alternators Pinout details Typical application circuit exciting current Alternator www.
DataSheet4U.
com 1 2 BZV61: 1 – cathode; 2 - anode BZV62: 1 – anode; 2 - cathode + 3 x BZV61 3x BZV62 Ordering information Device BZV61-22; …; BZV61-39 BZV62-22; …; BZV62-39 Quantity per box 500 500 Options The package quantities for the different package modifications are included in “PressFitPackageModifications.
pdf” Device marking Devices are identified by type.
Colour of marking: BZV61- black, BZV62 – red 422…….
date code 422 = 2004 week 22 ZETEX BZV61……………………………….
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diode type 22………………………….
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Zener voltage VZ (in V) 22 Issue 2 – August 2006 © Zetex Semiconductors plc 2006 1 www.
zetex.
com BZV61 / BZV62 Absolute maximum ratings (at Tamb = 25°C unless otherwise stated) Parameter BZV61-22 Z-current (continuous) BZV61-27 BZV61-33 BZV61-39 Mean forward current BZV62-22 BZV62-27 BZV62-33 BZV62-39 IF(AV) IZ Symbol 7.
2 5.
8 4.
8 4.
2 35 600 Surge forward current IFSM 500 A A sinusoidal, f = 15 - 1000 Hz TJ = 25°C, half-sine wave, ≤ 10 ms TJ = 175°C, half-sine wave, ≤ 10 ms TJ = 25°C, half-sine wave, ≤ 10 ms TJ = 175°C, half-sine wave, ≤ 10 ms f = 15 - 1000 Hz sinusoidal, f = 15 - 1000 Hz A Tc = 25°C Unit Test condition 1800 Maximum rated value ∫i²dt 1250 Repetitive peak forward current Effective forward current Junction temperature Storage temperature range IFRM=π*IF(AV) IF(RMS) TJmax Tstg 110 55 175 - 50 to + 150 A A °C °C A²s Thermal resistance Parameter Junction to case Symbol RθJC Value 0.
8 Unit °C/W Issue 2 – August 2006 © Zetex Semiconductors plc ...


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