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APM2312

Anpec Electronics
Part Number APM2312
Manufacturer Anpec Electronics
Description N-Channel MOSFET
Published Jul 23, 2007
Detailed Description APM2312 N-Channel Enhancement Mode MOSFET Features • 16V/5A , RDS(ON)=35mΩ(typ.) @ VGS=4.5V Pin Description D 3 RDS(O...
Datasheet PDF File APM2312 PDF File

APM2312
APM2312

Overview
APM2312 N-Channel Enhancement Mode MOSFET Features • 16V/5A , RDS(ON)=35mΩ(typ.
) @ VGS=4.
5V Pin Description D 3 RDS(ON)=45mΩ(typ.
) @ VGS=2.
5V  RDS(ON)=60mΩ(typ.
) @ VGS=1.
8V • • • Super High Dense Cell Design for Extremely Low RDS(ON) Reliable and Rugged G S 1 2 SOT-23 Package Top View of SOT-23 D Applications • Power Management in Notebook Computer , Portable Equipment and Battery Powered Systems.
www.
DataSheet4U.
com G Ordering and Marking Information APM2312 Handling Code Temp.
Range Package Code S N-Channel MOSFET Package Code A : SOT-23 Operation Junction Temp.
Range C : -55 to 150°C Handling Code TR : Tape & Reel APM2312 A : M12X X - Date Code Absolute Maximum Ratings Symbol VDSS VGSS ID* IDM Drain-Source Voltage Gate-Source Voltage Parameter (TA = 25°C unless otherwise noted) Rating 16 ±8 5 15 A V Unit Maximum Drain Current – Continuous Maximum Drain Current – Pulsed ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright  ANPEC Electronics Corp.
Rev.
A.
2 - July.
, 2003 1 www.
anpec.
com.
tw * Surface Mounted on FR4 Board, t ≤ 10 sec.
APM2312 Absolute Maximum Ratings (Cont.
) Symbol PD Parameter Maximum Power Dissipation TA=25°C TA=100°C TJ TSTG RθjA Maximum Junction Temperature Storage Temperature Range Thermal Resistance – Junction to Ambient (TA = 25°C unless otherwise noted) Rating 1.
25 W 0.
5 150 -55 to 150 100 °C °C °C/W Unit Electrical Characteristics Symbol Static BV DSS IDSS V GS(th) IGSS R DS(ON)a V SDa b (TA = 25°C unless otherwise noted) APM2312 Min.
Typ.
Max.
Parameter Test Condition Unit Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Threshold Voltage Gate Leakage Current Drain-Source On-state Resistance Diode Forward Voltage V GS =0V , IDS=250 µ A V DS =16V , VGS =0V V DS =V GS , IDS=250 µ A V GS = ± 8V , VDS=0V V GS =4.
5V , IDS =5A...


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