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LB123D

Part Number	LB123D
Manufacturer	Dc Components
Description	TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Published	Aug 14, 2007
Detailed Description	com DC COMPONENTS CO., LTD. R LB123D DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF NPN EPITAXI...
Datasheet	LB123D PDF File

Overview

...AL PLANAR TRANSISTOR Description Designed for high voltage, high speed switching circuits, and amplifier applications .
TO-126ML .
163(4.
12) .
153(3.
87) .
146(3.
70) .
136(3.
44) Pinning 1 = Emitter 2 = Collector 3 = Base .
044(1.
12) .
034(0.
87) .
060(1.
52) .
050(1.
27) .
148(3.
75) .
138(3.
50) .
300(7.
62) .
290(7.
37) 1 2 3 Absolute Maximum Ratings(TA=25oC) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC) Collector Current(Pluse) Total Power Dissipation(TC=25 C) Junction Temperature Storage Temperature o .
123(3.
12) .
113(2.
87) Symbol VCBO VCEO VEBO IC IC PD TJ TSTG Rating 600 400 8 1 2 30 +150 -55 to +150 Unit V V V A A W o o .
084(2.
12) .
07...

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