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RF3140

RF Micro Devices
Part Number RF3140
Manufacturer RF Micro Devices
Description QUAD-BAND GSM850/GSM900/DCS/PCS POWER AMP MODULE
Published Aug 27, 2007
Detailed Description www.DataSheet4U.com RF3140 0 Pb-Free Product Typical Applications • 3V Quad-Band GSM Handsets • Commercial and Consumer...
Datasheet PDF File RF3140 PDF File

RF3140
RF3140

Overview
www.
DataSheet4U.
com RF3140 0 Pb-Free Product Typical Applications • 3V Quad-Band GSM Handsets • Commercial and Consumer Systems • Portable Battery-Powered Equipment Product Description The RF3140 is a high-power, high-efficiency power amplifier module with integrated power control.
The device is self-contained with 50 Ω input and output terminals.
The power control function is also incorporated, eliminating the need for directional couplers, detector diodes, power control ASICs and other power control circuitry; this allows the module to be driven directly from the DAC output.
The device is designed for use as the final RF amplifier in GSM850, EGSM900, DCS and PCS handheld digital cellular equipment and other applications in the 824MHz to 849MHz, 880MHz to 915MHz, 1710MHz to 1785MHz and 1850MHz to 1910MHz bands.
On-board power control provides over 50dB of control range with an analog voltage input; and, power down with a logic “low” for standby operation.
Optimum Technology Matching® Applied Si BJT Si Bi-CMOS InGaP/HBT 9.
600 TYP 8.
800 TYP 8.
200 TYP 7.
400 TYP 6.
800 TYP 6.
000 TYP 5.
400 TYP 4.
600 TYP 4.
000 TYP 3.
200 TYP 2.
600 TYP 1.
800 TYP 1.
200 TYP 0.
400 TYP 0.
000 9.
098 TYP 0.
000 1.
797 8.
205 8.
280 QUAD-BAND GSM850/GSM900/DCS/PCS POWER AMP MODULE • GSM850/EGSM900/DCS/PCS Products • GPRS Class 12 Compatible • Power StarTM Module 5.
400 TYP 6.
000 TYP 6.
800 TYP 7.
400 TYP 8.
200 TYP 8.
275 TYP 8.
800 TYP 9.
600 TYP Pin 1 8.
747 0.
400 TYP 1.
200 TYP 1.
800 TYP 2.
600 TYP 3.
200 TYP 4.
000 TYP 4.
600 TYP 5.
925 4.
075 1.
245 0.
306 Pin 1 1.
70 1.
45 10.
00 ± 0.
10 10.
00 ± 0.
10 0.
450 ± 0.
075 9 Package Style: Module (10mmx10mm) GaAs HBT SiGe HBT GaN HEMT 9Si CMOS GaAs MESFET Features • Complete Power Control Solution • Single 3.
0V to 5.
5V Supply Voltage • +35dBm GSM Output Power at 3.
5V • +33dBm DCS/PCS Output Power at 3.
5V SiGe Bi-CMOS 12 DCS/PCS IN 1 BAND SELECT 2 TX ENABLE 3 VBATT 4 VREG 5 VRAMP 6 GSM850/GSM900 IN 7 8 VCC2 9 GSM850/GSM900 OUT 10 VCC OUT 11 DCS/PCS OUT ...


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