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RF3145

RF Micro Devices
Part Number RF3145
Manufacturer RF Micro Devices
Description QUAD-BAND GSM/EDGE/GSM850/DCS/PCS POWER AMPLIFIER MODULE
Published Aug 27, 2007
Detailed Description www.DataSheet4U.com RF3145 0 Typical Applications • 3V Dual/Triple/Quad-Band Mode Handsets • Commercial and Consumer Sy...
Datasheet PDF File RF3145 PDF File

RF3145
RF3145


Overview
www.
DataSheet4U.
com RF3145 0 Typical Applications • 3V Dual/Triple/Quad-Band Mode Handsets • Commercial and Consumer Systems • Portable Battery-Powered Equipment • GSM850 and GSM900 Products Product Description The RF3145 is a high power, high efficiency power amplifier module with integrated power control.
This module is self-contained with 50 Ω input and output terminals.
The device is manufactured on an advance Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final dual-mode GMSK/8PSK RF amplifier in GSM, DCS and PCS handheld cellular equipment and other applications in the 824MHz to 849MHz, 880MHz to 915MHz, and in the 1710MHz to 1910MHz bands.
Internal band select provides control to select the GSM850/GSM900 or DCS/PCS band.
The device is packaged on ultra-small LCC, minimizing the required board space.
RoHS Compliant & Pb-Free Product QUAD-BAND GSM/EDGE/GSM850/DCS/PCS POWER AMPLIFIER MODULE • EDGE and GPRS Class 12 Compatible • DCS/PCS Products 1 1.
70 1.
45 10.
00±0.
10 0.
450±0.
075 10.
00±0.
10 1.
275 7.
227 7.
325 7.
500 TYP 8.
275 8.
300 TYP 9.
204 9.
242 9.
646 1 9.
600 TYP 8.
800 TYP 8.
200 TYP 7.
400 TYP 6.
800 TYP 6.
000 TYP 5.
475 4.
525 4.
000 TYP 3.
200 TYP 2.
600 TYP 1.
800 TYP 1.
200 TYP 0.
400 TYP 0.
000 0.
000 0.
400 TYP 1.
200 TYP 1.
797 TYP 2.
600 TYP 3.
200 TYP 4.
000 TYP 4.
600 TYP 5.
400 TYP 6.
000 TYP 6.
800 TYP 7.
330 8.
280 8.
800 TYP 9.
600 TYP 8.
725 6.
155 6.
100 5.
925 5.
400 TYP 4.
600 TYP 4.
075 3.
955 1.
275 Optimum Technology Matching® Applied Si BJT Si Bi-CMOS InGaP/HBT 9 Package Style: Module (10mmx10mm) GaAs HBT SiGe HBT GaN HEMT 9Si CMOS GaAs MESFET Features • Integrated Power Control & Band Select • Single 3.
0V to 4.
8V Supply Voltage SiGe Bi-CMOS NC • +35.
0dBm GSM Output Pwr at 3.
5V • +33dBm DCS/PCS Output Pwr at 3.
5V 11 DCS OUT 12 DCS IN 1 BAND SELECT 2 TX ENABLE 3 VBATT 4 VMODE 5 VRAMP 6 GSM IN 7 8 NC 9 GSM OUT 10 NC • +29dBm 8PSK Output Pwr • 53% GSM and 50% DCS/PCS PAE Ordering Information RF3145 ...



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