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LN51F

Panasonic Semiconductor
Part Number LN51F
Manufacturer Panasonic Semiconductor
Description GaAs Infrared Light Emitting Diodes
Published Mar 22, 2005
Detailed Description Infrared Light Emitting Diodes LN51F, LN51L GaAs Infrared Light Emitting Diodes For optical control systems LN51F ø4.6...
Datasheet PDF File LN51F PDF File

LN51F
LN51F


Overview
Infrared Light Emitting Diodes LN51F, LN51L GaAs Infrared Light Emitting Diodes For optical control systems LN51F ø4.
6±0.
15 Unit : mm Glass window 12.
7 min.
4.
5±0.
2 2-ø0.
45±0.
05 2.
54±0.
25 Features High-power output, high-efficiency : PO = 6 mW (typ.
) Fast response : tr, tf = 1 µs (typ.
) Infrared light emission close to monochromatic light : λP =950 nm (typ.
) Narrow directivity, suitable for effective use of optical output : θ = 8 deg.
(LN51L) Wide directivity, matched for external optical systems : θ = 32 deg.
(LN51F) TO-18 standard type package 2 0.
0± 1.
1.
0± 0.
15 3˚ 45± 2 1 ø5.
75 max.
1: Cathode 2: Anode LN51L ø4.
6±0.
15 Glass lens Unit : mm Absolute Maximum Ratings (Ta = ...



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