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LN52

Panasonic Semiconductor
Part Number LN52
Manufacturer Panasonic Semiconductor
Description GaAs Infrared Light Emitting Diode
Published Mar 22, 2005
Detailed Description Infrared Light Emitting Diodes LN52 GaAs Infrared Light Emitting Diode Unit : mm For optical control systems Features ...
Datasheet PDF File LN52 PDF File

LN52
LN52

Overview
Infrared Light Emitting Diodes LN52 GaAs Infrared Light Emitting Diode Unit : mm For optical control systems Features High-power output, high-efficiency : PO = 6 mW (typ.
) Wide directivity, matched for external optical systems : θ = 100 deg.
Infrared light emission close to monochromatic light : λP = 950 nm Optimum for mesuring instruments and control equipments in conbination with silicon photodetectors ø5.
35 +0.
2 –0.
1 ø4.
2 +0.
1 –0.
2 3.
0±0.
3 12.
7 min.
2.
0±0.
1 0.
2±0.
05 2-ø0.
45±0.
05 0 1.
5 .
1 +0 0.
1 – 1.
0± 0.
1 45± 3˚ 2 1 Absolute Maximum Ratings (Ta = 25˚C) Parameter Power dissipation Forward current (DC) Pulse forward current Reverse voltage (DC) Operating ambient temperature St...


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