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LN55

Panasonic Semiconductor
Part Number LN55
Manufacturer Panasonic Semiconductor
Description GaAs Infrared Light Emitting Diode
Published Mar 22, 2005
Detailed Description Infrared Light Emitting Diodes LN55 GaAs Infrared Light Emitting Diode Unit : mm For optical control systems Features ...
Datasheet PDF File LN55 PDF File

LN55
LN55

Overview
Infrared Light Emitting Diodes LN55 GaAs Infrared Light Emitting Diode Unit : mm For optical control systems Features High-power output, high-efficiency : PO = 3.
5 mW (typ.
) Suited for use with silicon photodetectors Infrared light emission close to monochromatic light : λP = 950 nm (typ.
) High-speed modulation capability 4.
5±0.
3 2.
8 1.
8 1.
0 4.
8±0.
3 2.
4 2.
4 12.
8 min.
10.
0 min.
2-0.
98±0.
2 2-0.
45±0.
15 0.
45±0.
15 Absolute Maximum Ratings (Ta = 25˚C) Parameter Power dissipation Forward current (DC) Pulse forward current Reverse voltage (DC) Operating ambient temperature Storage temperature * Symbol PD IF IFP * Ratings 75 50 1 3 –25 to +85 –30 to +100 Unit mW mA A V ˚C ˚C 1 R1.
75 2.
54 ...


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