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LN58

Panasonic Semiconductor
Part Number LN58
Manufacturer Panasonic Semiconductor
Description GaAs Infrared Light Emitting Diode
Published Mar 22, 2005
Detailed Description Infrared Light Emitting Diodes LN58 GaAs Infrared Light Emitting Diode Unit : mm For optical control systems Features ...
Datasheet PDF File LN58 PDF File

LN58
LN58

Overview
Infrared Light Emitting Diodes LN58 GaAs Infrared Light Emitting Diode Unit : mm For optical control systems Features High-power output, high-efficiency : PO = 3.
5 mW (typ.
) Emitted light spectrum suited for silicon photodetectors Infrared light emission close to monochromatic light : λP = 950 nm (typ.
) Small size, thin side-view type package 3.
9±0.
3 Not soldered ø2.
4 4.
5±0.
3 1.
2 2.
9±0.
25 0.
9 1.
7±0.
2 0.
8 12.
8 min.
2.
8 2.
4 1.
5 2-1.
2±0.
3 2-0.
45±0.
15 1 2.
54 R1.
2 2 0.
45±0.
15 Absolute Maximum Ratings (Ta = 25˚C) Parameter Power dissipation Forward current (DC) Pulse forward current Reverse voltage (DC) Operating ambient temperature Storage temperature * R0.
6 Symbol PD IF IFP * Ratings...


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