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LN66F

Panasonic Semiconductor
Part Number LN66F
Manufacturer Panasonic Semiconductor
Description GaAs Infrared Light Emitting Diode
Published Mar 22, 2005
Detailed Description Infrared Light Emitting Diodes LN66F GaAs Infrared Light Emitting Diode Unit : mm For light source of remote control s...
Datasheet PDF File LN66F PDF File

LN66F
LN66F

Overview
Infrared Light Emitting Diodes LN66F GaAs Infrared Light Emitting Diode Unit : mm For light source of remote control systems Features High-power output, high-efficiency : Ie = 13.
0 mW/sr (min.
) Emitted light spectrum suited for silicon photodetectors Narrow directivity : θ = 15 deg.
(typ.
) Transparent epoxy resin package 13.
5±1.
0 11.
5±1.
0 3.
6±0.
3 1.
0 7.
65±0.
2 ø5.
0±0.
2 Not soldered 2-1.
0±0.
15 2-0.
6±0.
15 2.
54 0.
6±0.
15 2 1 1: Cathode 2: Anode ø6.
0±0.
2 Absolute Maximum Ratings (Ta = 25˚C) Parameter Power dissipation Forward current (DC) Pulse forward current Reverse voltage (DC) Operating ambient temperature Storage temperature * Symbol PD IF IFP* VR Topr Tstg Ratings 75 50 1.
5 3 –25 to +85 – 40 to +100 Unit mW mA A V ˚C ˚C f = 100 Hz, Duty cycle = 0.
1 % Electro-Optical Characteristics (Ta = 25˚C) Parameter Radiant intensity at center Peak emission wavelength Spectral half band width Forward voltage (DC) Pulse forward voltage Reverse current (DC) Capacitance between pins Half-powe...


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