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LN69

Panasonic Semiconductor
Part Number LN69
Manufacturer Panasonic Semiconductor
Description GaAs Infrared Light Emitting Diode
Published Mar 22, 2005
Detailed Description Infrared Light Emitting Diodes LN69 GaAs Infrared Light Emitting Diode Unit : mm Not soldered 2.0 max. 2-0.8 max. 2-0.5...
Datasheet PDF File LN69 PDF File

LN69
LN69

Overview
Infrared Light Emitting Diodes LN69 GaAs Infrared Light Emitting Diode Unit : mm Not soldered 2.
0 max.
2-0.
8 max.
2-0.
5±0.
1 0.
5±0.
1 2 (1.
5) 1 2.
54 1.
6 For optical control systems 5.
5±0.
2 1.
0 15.
5±1.
0 1.
0 4.
5±0.
3 ø3.
6±0.
2 ø3.
0±0.
2 Features High-power output, high-efficiency : Ie = 3.
5 mW/sr (min.
) Emitted light spectrum suited for silicon photodetectors : λP = 940 nm (typ.
) Good radiant power output linearity with respect to input current Long lifetime, high reliability ø3 plastic package Absolute Maximum Ratings (Ta = 25˚C) Parameter Power dissipation Forward current (DC) Pulse forward current Reverse voltage (DC) Operating ambient temperature Storage temperature * Symbol PD IF IFP* VR...


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