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G2307

GTM
Part Number G2307
Manufacturer GTM
Description P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published Sep 18, 2007
Detailed Description www.DataSheet4U.com Pb Free Plating Product CORPORATION G2307 P-CHANNEL ENHANCEMENT MODE POWER MOSFET ISSUED DATE :20...
Datasheet PDF File G2307 PDF File

G2307
G2307

Overview
www.
DataSheet4U.
com Pb Free Plating Product CORPORATION G2307 P-CHANNEL ENHANCEMENT MODE POWER MOSFET ISSUED DATE :2004/11/02 REVISED DATE :2005/10/13C BVDSS RDS(ON) ID -16V 60m -4.
0A The G2307 provides the designer with the best combination of fast switching, low on-resistance and cost-effectiveness.
The G2307 is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
Description Applications Power Management in Notebook Computer Portable Equipment Battery Powered System.
Package Dimensions REF.
A B C D E F Millimeter Min.
Max.
2.
70 3.
10 2.
40 2.
80 1.
40 1.
60 0.
35 0.
50 0 0.
10 0.
45 0.
55 REF.
G H K J L M Millimeter Min.
Max.
1.
90 REF.
1.
00 1.
30 0.
10 0.
20 0.
40 0.
85 1.
15 0 10 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage 3 Continuous Drain Current Continuous Drain Current3 Pulsed Drain Current1 Power Dissipation Linear Derating Factor Symbol VDS VGS ID @TA=25 ID @TA=70 IDM PD @TA=25 Tj, Tstg Symbol Rthj-a Operating Junction and Storage Temperature Range Ratings -16 8 -4.
0 -3.
3 -12 1.
38 0.
01 -55 ~ +150 Ratings 90 Unit V V A A A W W/ Thermal Data Parameter 3 Thermal Resistance Junction-ambient Max.
Unit /W 1/4 CORPORATION Electrical Characteristics (Tj = 25 Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient ISSUED DATE :2004/11/02 REVISED DATE :2005/10/13C Unless otherwise specified) Min.
-16 Typ.
-0.
01 12 15 1.
3 4 8 11 54 36 985 180 160 Max.
-1.
0 ±100 -1 -25 60 70 90 24 1580 pF ns nC m Unit V V/ V S nA uA uA Test Conditions VGS=0, ID=-250uA Reference to 25 , ID=-1mA VDS= VGS, ID=-250uA VDS=-5.
0V, ID=-4.
0A VGS= ±8V VDS=-16V, VGS=0 VDS=-12V, VGS=0 ID=-4.
0A, VGS =-4.
5V ID=-3.
0A, VGS =-2.
5V ID=-2.
0A, VGS =-1.
8V ID=-4.
0A VDS=-12V VGS=-4.
5V VDS=-10V ID=-1A VGS=-10V RG=3.
3 RD=10 VGS=0V VDS=-15V f=1.
0MHz Symbol BVDSS BVDSS/ Tj VGS(th) Gate Threshold Voltage Forward Transconductance Gate-Source Leakage Cu...


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