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G2308E

GTM
Part Number G2308E
Manufacturer GTM
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published Sep 18, 2007
Detailed Description www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2006/01/16 REVISED DATE : G2308E N-CHANNEL ENHANCEMENT MODE P...
Datasheet PDF File G2308E PDF File

G2308E
G2308E

Overview
www.
DataSheet4U.
com Pb Free Plating Product ISSUED DATE :2006/01/16 REVISED DATE : G2308E N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 20V 600m 1.
2A Description The G2308E utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device.
The SOT-23 package is universally used for all commercial-industrial applications.
*Capable of 2.
5V gate drive *Lower on-resistance *2KV ESD Capability Features Package Dimensions REF.
A B C D E F Millimeter Min.
Max.
2.
70 3.
10 2.
40 2.
80 1.
40 1.
60 0.
35 0.
50 0 0.
10 0.
45 0.
55 REF.
G H K J L M Millimeter Min.
Max.
1.
90 REF.
1.
00 1.
30 0.
10 0.
20 0.
40 0.
85 1.
15 0° 10° Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3, VGS@4.
5V 3 Continuous Drain Current , VGS@4.
5V 1,2 Pulsed Drain Current Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Symbol VDS VGS ID @TA=25 ID ...


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